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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:59Z |
Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO2 nMOSFET
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:12:56Z |
Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:10:35Z |
Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO(2) nMOSFET
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:07:34Z |
Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurement
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; Ho, Yi-Hsun |
Showing items 1-4 of 4 (1 Page(s) Totally)
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