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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立交通大學 2019-08-02T02:15:26Z The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories Chiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro
國立交通大學 2019-04-03T06:39:55Z Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash Chiu, Yung-Yueh; Aoki, Minoru; Yano, Masaru; Shirota, Riichiro
國立交通大學 2019-04-02T05:58:58Z Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical Investigation Chiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro
國立交通大學 2018-08-21T05:53:13Z Evaluation of the Role of Deep Trap State Using Analytical Model in the Program/Erase Cycling of NAND Flash Memory and Its Process Dependence Yang, Bo-Jun; Wu, Yu-Ting; Chiu, Yung-Yueh; Kuo, Tse-Mien; Chang, Jung-Ho; Wang, Pin-Yao; Shirota, Riichiro
國立交通大學 2017-04-21T06:48:31Z Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs Cheng, Hui-Wen; Chiu, Yung-Yueh; Li, Yiming
國立交通大學 2015-12-02T02:59:29Z Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer Chiu, Yung-Yueh; Yang, Bo-Jun; Li, Fu-Hai; Chang, Ru-Wei; Sun, Wein-Town; Lo, Chun-Yuan; Hsu, Chia-Jung; Kuo, Chao-Wei; Shirota, Riichiro
國立交通大學 2015-07-21T08:29:05Z New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase Endurance Shirota, Riichiro; Yang, Bo-Jun; Chiu, Yung-Yueh; Chen, Hsuan-Tse; Ng, Seng-Fei; Wang, Pin-Yao; Chang, Jung-Ho; Kurachi, Ikuo
國立交通大學 2014-12-12T01:56:17Z P型SONOS快閃記憶體元件電荷動態分佈之研究 邱勇岳; Chiu, Yung-Yueh; 渡邊浩志; Watanabe, Hiroshi
國立交通大學 2014-12-08T15:43:49Z Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs Li, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh
國立交通大學 2014-12-08T15:31:35Z Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro
國立交通大學 2014-12-08T15:21:19Z A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-kappa/Metal Gate Device Li, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; Yiu, Chun-Yen; Su, Hsin-Wen
國立交通大學 2014-12-08T15:11:48Z Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei

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