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"chiu yung yueh"
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| 國立交通大學 |
2019-08-02T02:15:26Z |
The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories
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Chiu, Yung-Yueh; Lin, Cheng-Han; Yang, Jhih-Siang; Yang, Bo-Jun; Aoki, Minoru; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2019-04-03T06:39:55Z |
Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash
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Chiu, Yung-Yueh; Aoki, Minoru; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2019-04-02T05:58:58Z |
Transconductance Distribution in Program/Erase Cycling of NAND Flash Memory Devices: a Statistical Investigation
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Chiu, Yung-Yueh; Lin, I-Chun; Chang, Kai-Chieh; Yang, Bo-Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Evaluation of the Role of Deep Trap State Using Analytical Model in the Program/Erase Cycling of NAND Flash Memory and Its Process Dependence
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Yang, Bo-Jun; Wu, Yu-Ting; Chiu, Yung-Yueh; Kuo, Tse-Mien; Chang, Jung-Ho; Wang, Pin-Yao; Shirota, Riichiro |
| 國立交通大學 |
2017-04-21T06:48:31Z |
Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs
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Cheng, Hui-Wen; Chiu, Yung-Yueh; Li, Yiming |
| 國立交通大學 |
2015-12-02T02:59:29Z |
Characterization of the charge trapping properties in p-channel silicon-oxide-nitride-oxide-silicon memory devices including SiO2/Si3N4 interfacial transition layer
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Chiu, Yung-Yueh; Yang, Bo-Jun; Li, Fu-Hai; Chang, Ru-Wei; Sun, Wein-Town; Lo, Chun-Yuan; Hsu, Chia-Jung; Kuo, Chao-Wei; Shirota, Riichiro |
| 國立交通大學 |
2015-07-21T08:29:05Z |
New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase Endurance
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Shirota, Riichiro; Yang, Bo-Jun; Chiu, Yung-Yueh; Chen, Hsuan-Tse; Ng, Seng-Fei; Wang, Pin-Yao; Chang, Jung-Ho; Kurachi, Ikuo |
| 國立交通大學 |
2014-12-12T01:56:17Z |
P型SONOS快閃記憶體元件電荷動態分佈之研究
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邱勇岳; Chiu, Yung-Yueh; 渡邊浩志; Watanabe, Hiroshi |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs
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Li, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh |
| 國立交通大學 |
2014-12-08T15:31:35Z |
Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme
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Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro |
| 國立交通大學 |
2014-12-08T15:21:19Z |
A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-kappa/Metal Gate Device
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Li, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; Yiu, Chun-Yen; Su, Hsin-Wen |
| 國立交通大學 |
2014-12-08T15:11:48Z |
Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices
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Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei |
Showing items 1-12 of 12 (1 Page(s) Totally)
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