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Showing items 11-27 of 27 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T03:46:43Z |
Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substrates
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Wang, YH; Tai, K; Hsieh, YF; Chu, SNG; Wynn, JD; Hong, M; Fischer, RJ; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
Blue-green surface-emitting second-harmonic generators on (111) B GaAs
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MINGHWEI HONG; Cho, AY; Chu, GNS; Zydzik, GJ; Sivco, DL; Hong, M; Fischer, RJ; Vakhshoori, D |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
Blue/green surface-emitting second-harmonic generators on< 111> GaAs substrate
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Vakhshoori, D; Fischer, RJ; Hong, M; Chu, GS; Zydzik, GJ; Sivco, DL; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
First demonstration of GaAs CMOS
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Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Use of hybrid reflectors to achieve low thresholds in all molecular-beam epitaxy grown vertical cavity surface emitting laser diodes
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Fischer, RJ;Tai, K;Hong, M;V;enberg, JM;Ying, JY;Mannaerts, JP;Cho, AY; Fischer, RJ; Tai, K; Hong, M; V; enberg, JM; Ying, JY; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Insulator/GaN Heterostructures of Low Interfacial Density of States
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Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes
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Wang, YH;Tai, K;Wynn, JD;Hong, M;Fischer, RJ;Mannaerts, JP;Cho, AY; Wang, YH; Tai, K; Wynn, JD; Hong, M; Fischer, RJ; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
Array operation of GaAs/AlGaAs vertical cavity surface emitting lasers
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TAI, K;WANG, YH;WYNN, JD;HONG, M;FISCHER, RJ;MANNAERTS, JM;CHO, AY; TAI, K; WANG, YH; WYNN, JD; HONG, M; FISCHER, RJ; MANNAERTS, JM; CHO, AY; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:05:46Z |
HIGH-REFLECTIVITY ALAS0.52SB0.48/GAINAS(P) DISTRIBUTED BRAGG MIRROR ON INP SUBSTRATE FOR 1.3-1.55-MU-M WAVELENGTHS
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TAI, K; FISCHER, RJ; CHO, AY; HUANG, KF |
| 國立交通大學 |
2014-12-08T15:04:57Z |
EFFECTS OF SB4/GA RATIOS ON THE ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODES
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WANG, YH; HOUNG, MP; SZE, PW; CHEN, JF; CHO, AY |
| 國立交通大學 |
2014-12-08T15:04:54Z |
THE EFFECTS OF GASB/INAS BROKEN GAP ON INTERBAND TUNNELING CURRENT OF A GASB/INAS/GASB/ALSB/INAS TUNNELING STRUCTURE
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CHEN, JF; CHO, AY |
| 國立交通大學 |
2014-12-08T15:04:49Z |
INTERBAND TUNNELING BETWEEN VALENCE-BAND AND CONDUCTION-BAND QUANTUM-WELLS IN A GASB/ALSB/INAS/ALSB/GASB/ALSB/INAS TRIPLE-BARRIER STRUCTURE
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CHEN, JF; CHO, AY |
| 國立交通大學 |
2014-12-08T15:04:36Z |
MOLECULAR-BEAM EPITAXY GROWTH OF INAS-ALSB-GASB INTERBAND TUNNELING DIODES
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CHEN, JF; CHO, AY |
| 國立交通大學 |
2014-12-08T15:03:44Z |
INVESTIGATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN GASB/ALSB/INAS/GASB/ALSB/INAS STRUCTURES
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WANG, YH; LIU, MH; HOUNG, MP; CHEN, JF; CHO, AY |
| 國立交通大學 |
2014-12-08T15:03:35Z |
ELECTRICAL-PROPERTIES OF UNDOPED AND SNTE-DOPED GAXIN1-XSB MOLECULAR-BEAM-EPITAXIALLY GROWN ON GAAS
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CHEN, JF; JAW, SH; CHO, AY |
Showing items 11-27 of 27 (1 Page(s) Totally)
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