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Showing items 1-9 of 9 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:41:21Z |
A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics
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Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB |
| 國立交通大學 |
2014-12-08T15:40:49Z |
PVD HfO2 for high-precision MIM capacitor applications
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Kim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:40Z |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
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Kim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:17Z |
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
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Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:03Z |
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics
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Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:32Z |
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates
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Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:11Z |
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
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Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N |
| 國立交通大學 |
2014-12-08T15:39:00Z |
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
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Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:18Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
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Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
Showing items 1-9 of 9 (1 Page(s) Totally)
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