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Institution Date Title Author
國立交通大學 2017-04-21T06:50:01Z A Low Operating Voltage IGZO TFT Using LaLuO3 Gate Dielectric Chou, Kun-I; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Lee, Kai-Yu; Li, Shang-Rong; Chin, Albert
國立交通大學 2017-04-21T06:50:00Z GeO2/PZT Resistive Random Access Memory Devices With Ni electrode Chou, Kun-I; Cheng, Chun-Hu; Chin, Albert
國立交通大學 2017-04-21T06:49:59Z Current Uniformity Improvement in Flexible Resistive Memory Zheng, Zhi-Wei; Cheng, Chun-Hu; Chou, Kun-I; Liu, Ming; Chin, Albert
國立交通大學 2015-07-21T08:29:20Z TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density Cheng, Chun-Hu; Hsu, Hsiao-Hsuan; Chou, Kun-I
國立交通大學 2014-12-08T15:36:20Z Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application Chou, Kun-I; Cheng, Chun-Hu; Chin, Albert
國立交通大學 2014-12-08T15:28:51Z Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode Zheng, Zhi-Wei; Cheng, Chun-Hu; Chou, Kun-I; Liu, Ming; Chin, Albert
國立交通大學 2014-12-08T15:22:12Z Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory Chou, Kun-I; Cheng, Chun-Hu; Chen, Po-Chun; Yeh, Fon-Shan; Chin, Albert

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