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Showing items 1-23 of 23 (1 Page(s) Totally)
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Institution	Date	Title	Author
國家衛生研究院	2023-04-13	Real-time observation for dynamic oscillation during the self-assembly and clearance of Abeta42	Yao, CN;Wu, TH;Cheng, PY;Tsao, YC;Lu, YF;Chu, LK;Chiu, CC;Lin, SY
臺大學術典藏	2018-09-10T15:21:41Z	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process	Fu, CH;Lin, YH;Lee, WC;Lin, TD;Chu, RL;Chu, LK;Chang, P;Chen, MH;Hsueh, WJ;Chen, SH;others; Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T09:20:49Z	Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric	Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:40:14Z	Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics	Chu, LK;Merckling, C;Alian, A;Dekoster, J;Kwo, J;Hong, M;Caymax, M;Heyns, Marc; Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; Hong, M; Caymax, M; Heyns, Marc; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:40:12Z	High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation	Pi, T-W;Huang, ML;Kwo, J;Lee, WC;Chu, LK;Lin, TD;Chiang, TH;Wang, YC;Wu, YD;Hong, M; Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:40:12Z	InGaAs and Ge MOSFETs with high $κ$ dielectrics	Lee, WC;Chang, P;Lin, TD;Chu, LK;Chiu, HC;Kwo, J;Hong, M; Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:40:11Z	Electronic structures of Ga2O3 (Gd2O3) gate dielectric on n-Ge (001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study	Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG; Wang, YC; Chiang, TH; Lin, TD; Chu, LK; Huang, ML; Lee, WC; Pi, T-W; Pi, T-W;Lee, WC;Huang, ML;Chu, LK;Lin, TD;Chiang, TH;Wang, YC;Wu, YD;Hong, M;Kwo, J
臺大學術典藏	2018-09-10T08:40:11Z	Direct determination of flat-band voltage for metal/high $κ$ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation	Chang, C-L;Lee, WC;Chu, LK;Hong, M;Kwo, J;Chang, Y-M; Chang, C-L; Lee, WC; Chu, LK; Hong, M; Kwo, J; Chang, Y-M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:52Z	High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations	Chu, RL;Lin, TD;Chu, LK;Huang, ML;Chang, CC;Hong, M;Lin, CA;Kwo, J; Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:52Z	Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers	Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:51Z	Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS	Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others
臺大學術典藏	2018-09-10T08:12:50Z	Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT	Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:49Z	InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric	Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:19Z	Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge	Chu, LK;Lee, WC;Huang, ML;Chang, YH;Tung, LT;Chang, CC;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:18Z	Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices	Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:17Z	Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium	Lee, WC;Chin, BH;Chu, LK;Lin, TD;Lee, YJ;Tung, LT;Lee, CH;Hong, M;Kwo, J; Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:12Z	High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers	Chu, LK;Chu, RL;Huang, ML;Tung, LT;Lin, TD;Chang, CC;Kwo, J;Hong, M; Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:12Z	Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100)	Chu, LK;Lin, TD;Lee, CH;Tung, LT;Lee, WC;Chu, RL;Chang, CC;Hong, Mingyi;Kwo, J; Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; Hong, Mingyi; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:19Z	Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition	Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T06:28:18Z	Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3) as a gate dielectric	Tsai, PJ; Chu, LK; Chen, YW; Chiu, YN; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T05:21:13Z	Depletion-mode InGaAs/GaAs MOSFET with Oxide Passivated by Amorphous Si	Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG
國家衛生研究院	2017-01	Monitoring the transient thermal infrared emission of gold nanoparticles upon photoexcitation with a step-scan fourier-transform spectrometer	Liu, JL;Yang, YT;Lin, CT;Yu, YJ;Chen, JK;Chu, LK
國立交通大學	2014-12-08T15:16:20Z	Infrared absorption of CH3SO2 detected with time-resolved Fourier-transform spectroscopy	Chu, LK; Lee, YP

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