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| 臺大學術典藏 |
2019-12-27T07:49:19Z |
Passivation of GaSb using molecular beam epitaxy Y 2 O 3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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Chu, R.L.;Chiang, T.H.;Hsueh, W.J.;Chen, K.H.;Lin, K.Y.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process
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Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 國立臺灣大學 |
2012 |
Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric
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Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M. |
| 佛光大學 |
2003-02 |
Importance of issues and certainty of Responses: The role of culture in emotional experiences
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Liu, R.K.;Chu, R. L.;Mesquita, B.;Marasawa, M. |
Showing items 11-14 of 14 (1 Page(s) Totally)
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