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Showing items 1-9 of 9 (1 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide
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Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
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Ren, F.; Hong, M.; Chu, S.N.G.; Marcus, M.A.; Schurman, M.J.; Baca, A.; Pearton, S.J.; Abernathy, C.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
GaN metal oxide semiconductor field effect transistors
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Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; Lothian, J.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Properties of high 庥 gate dielectrics Gd2O3 and Y2O3 for Si
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Rosamilia, J.M.; MINGHWEI HONG; Krautter, H.W.; Sergnt, A.M.; Krajewski, J.J.; Boone, T.; Lay, T.S.; Mannaerts, J.P.; Sapjeta, B.J.; Muller, D.A.; Chu, S.N.G.; Opila, R.L.; Chabal, Y.J.; Queeney, K.L.; Hong, M.; Kortan, A.R.; Kwo, J.; Kwo, J.;Hong, M.;Kortan, A.R.;Queeney, K.L.;Chabal, Y.J.;Opila, R.L.;Muller, D.A.;Chu, S.N.G.;Sapjeta, B.J.;Lay, T.S.;Mannaerts, J.P.;Boone, T.;Krautter, H.W.;Krajewski, J.J.;Sergnt, A.M.;Rosamilia, J.M. |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Properties of high 庥 gate dielectrics Gd2O3 and Y2O3 for Si
|
Rosamilia, J.M.; MINGHWEI HONG; Krautter, H.W.; Sergnt, A.M.; Krajewski, J.J.; Boone, T.; Lay, T.S.; Mannaerts, J.P.; Sapjeta, B.J.; Muller, D.A.; Chu, S.N.G.; Opila, R.L.; Chabal, Y.J.; Queeney, K.L.; Hong, M.; Kortan, A.R.; Kwo, J.; Kwo, J.;Hong, M.;Kortan, A.R.;Queeney, K.L.;Chabal, Y.J.;Opila, R.L.;Muller, D.A.;Chu, S.N.G.;Sapjeta, B.J.;Lay, T.S.;Mannaerts, J.P.;Boone, T.;Krautter, H.W.;Krajewski, J.J.;Sergnt, A.M.;Rosamilia, J.M. |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
|
Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2002 |
Single-crystal GaN/Gd2O3/GaN heterostructure
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Hong, M.;Kwo, J.;Chu, S.N.G.;Mannaerts, J.P.;Kortan, A.R.;Ng, H.M.;Cho, A.Y.;Anselm, K.A.;Lee, C.M.;Chyi, J.I.; Hong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG |
| 臺大學術典藏 |
2002 |
Single-crystal GaN/Gd2O3/GaN heterostructure
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Hong, M.;Kwo, J.;Chu, S.N.G.;Mannaerts, J.P.;Kortan, A.R.;Ng, H.M.;Cho, A.Y.;Anselm, K.A.;Lee, C.M.;Chyi, J.I.; Hong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG |
Showing items 1-9 of 9 (1 Page(s) Totally)
1
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