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Showing items 1-25 of 38 (2 Page(s) Totally)
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| 國立交通大學 |
2018-08-21T05:54:30Z |
Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
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Wu, Cheng-Hsien; Pan, Chih-Hung; Chen, Po-Hsun; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Shih, Chih-Cheng; Chi, Ting-Yang; Chu, Tian-Jian; Wu, Jia-Ji; Du, Xiaoqin; Zheng, Hao-Xuan; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:56Z |
Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory
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Wu, Cheng-Hsien; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Pan, Chih-Hung; Su, Yu-Ting; Chen, Po-Hsun; Lin, Shih-Kai; Hu, Shih-Jie; Sze, Simon M. |
| 國立交通大學 |
2018-08-21T05:53:18Z |
Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory
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Su, Yu-Ting; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Hsin-Lu; Chen, Min-Chen; Yang, Chih-Cheng; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:37Z |
Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
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Wang, Zhuo-Rui; Su, Yu-Ting; Li, Yi; Zhou, Ya-Xiong; Chu, Tian-Jian; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Sze, Simon M.; Miao, Xiang-Shui |
| 國立交通大學 |
2017-04-21T06:56:27Z |
Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:15Z |
Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Po-Hsun; Chen, Min-Chen; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:10Z |
Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Lin, Wen-Yan; Chen, Min-Chen; Sze, Simon M. |
| 國立成功大學 |
2016-12 |
Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Shih, Chih-Cheng; Lin, Chih-Yang; Chen, Po-Hsun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立成功大學 |
2016-10 |
Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Po-Hsun; Chen, Min-Chen; Sze, Simon M. |
| 國立成功大學 |
2016-10 |
Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory
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Shih, Chih-Cheng; Chen, Wen-Jen; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Tseng, Yi-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Chen, Jung-Hui; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-09-26 |
Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
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Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Lin, Wen-Yan; Chen, Min-Chen; Sze, Simon M. |
| 國立成功大學 |
2016-03 |
Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2015-12-02T02:59:35Z |
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
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Chen, Ji; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Lou, Jen-Chung; Chu, Tian-Jian; Wu, Cheng-Hsien; Chen, Min-Chen; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2015-12-02T02:59:17Z |
An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
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Zhang, Wei; Hu, Ying; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chen, Hsin-Lu; Su, Yu-Ting; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Su, Wan-Ching; Zheng, Jin-Cheng; Hung, Ya-Chi; Sze, Simon M. |
| 國立成功大學 |
2015-11 |
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
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Chen, Ji; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Lou, Jen-Chung; Chu, Tian-Jian; Wu, Cheng-Hsien; Chen, Min-Chen; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2015-08 |
An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
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Zhang, Wei; Hu, Ying; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chen, Hsin-Lu; Su, Yu-Ting; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Su, Wan-Ching; Zheng, Jin-Cheng; Hung, Ya-Chi; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:35:13Z |
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
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Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei |
| 國立交通大學 |
2014-12-08T15:35:05Z |
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
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Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:33:32Z |
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
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Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:32:57Z |
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
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Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
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Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:55Z |
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
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Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
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Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
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Chu, Tian-Jian; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Hsing-Hua; Chen, Jung-Hui; Chang, Kuan-Chang; Young, Tai-Fa; Chen, Kai-Hsang; Syu, Yong-En; Chang, Geng-Wei; Chang, Yao-Feng; Chen, Min-Chen; Lou, Jyun-Hao; Pan, Jhih-Hong; Chen, Jian-Yu; Tai, Ya-Hsiang; Ye, Cong; Wang, Hao; Sze, Simon M. |
Showing items 1-25 of 38 (2 Page(s) Totally)
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