|
"chung tung hsun"的相關文件
顯示項目 1-9 / 9 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立交通大學 |
2019-04-02T06:00:27Z |
The fabrication of nanomesas and nanometal contacts by using atomic force microscopy lithography
|
Chung, Tung-Hsun; Liao, Wen-Hsuan; Lin, Shih-Yen |
| 國立交通大學 |
2014-12-08T15:48:03Z |
The fabrication of nanomesas and nanometal contacts by using atomic force microscopy lithography
|
Chung, Tung-Hsun; Liao, Wen-Hsuan; Lin, Shih-Yen |
| 國立交通大學 |
2014-12-08T15:47:59Z |
In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation
|
Chung, Tung-Hsun; Chen, Shu-Han; Liao, Wen-Hsuan; Lin, Shih-Yen |
| 國立交通大學 |
2014-12-08T15:23:48Z |
In-Plane Gate Transistors With a 40-mu m-Wide Channel Width
|
Chung, Tung-Hsun; Lin, Wei-Hsun; Chao, Yi-Kai; Chang, Shu-Wei; Lin, Shih-Yen |
| 國立交通大學 |
2014-12-08T15:14:41Z |
Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
|
Tseng, Chi-Che; Chung, Tung-Hsun; Mai, Shu-Cheng; Chao, Kuang-Ping; Lin, Wei-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:12:14Z |
Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots
|
Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chung, Tung-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:11:17Z |
Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots
|
Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chen, Cheng-Nan; Lin, Wei-Hsun; Chung, Tung-Hsun; Lin, Shih-Yen; Chiu, Pei-Chin; Chyi, Jen-Inn; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:10:43Z |
The transition mechanisms of a ten-period InAs/GaAs quantum-dot infrared photodetector
|
Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shin-Yen; Chen, Cheng-Nan; Lin, Wei-Hsun; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi |
| 國立交通大學 |
2014-12-08T15:06:33Z |
Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
|
Lin, Shih-Yen; Tseng, Chi-Che; Chung, Tung-Hsun; Liao, Wen-Hsuan; Chen, Shu-Han; Chyi, Jen-Inn |
顯示項目 1-9 / 9 (共1頁)
1
每頁顯示[10|25|50]項目
|
