|
English
|
正體中文
|
简体中文
|
2817768
|
|
???header.visitor??? :
27861272
???header.onlineuser??? :
1083
???header.sponsordeclaration???
|
|
|
???tair.name??? >
???browser.page.title.author???
|
"chung wei min"???jsp.browse.items-by-author.description???
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立交通大學 |
2020-10-05T02:01:57Z |
A Study of the Relationship Between Endurance and Retention Reliability for a HfOx-Based Resistive Switching Memory
|
Chung, Wei-Min; Chang, Yao-Feng; Hsu, Yu-Lin; Chen, Y. -C. Daphne; Lin, Chao-Cheng; Lin, Chang-Hsieh; Leu, Jihperng |
國立交通大學 |
2020-07-01T05:22:12Z |
SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
|
Hsu, Yu-Lin; Chang, Yao-Feng; Chung, Wei-Min; Chen, Ying-Chen; Lin, Chao-Cheng; Leu, Jihperng |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
|