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| 國立交通大學 |
2018-08-21T05:56:34Z |
Full Low Temperature Microwave Processed Ge CMOS Achieving Diffusion-Less Junction and Ultrathin 7.5nm Ni Mono-Germanide
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Lee, Y. -J.; Chuang, S. -S.; Liu, C. -I.; Hsueh, F. -K.; Sung, P. -J.; Chen, H. -C.; Wu, C. -T.; Lin, K. -L.; Yao, J. -Y.; Shen, Y. -L.; Kuo, M. -L.; Yang, C. -H.; Luo, G. -L.; Chen, H. -W.; Lai, C. -H.; Current, M. I.; Wu, C. -Y.; Wan, Y. -M.; Tseng, T. -Y.; Hu, Chenming; Yang, F. -L. |
| 國立交通大學 |
2017-04-21T06:49:14Z |
A Novel Junctionless FinFET Structure with Sub-5nm Shell Doping Profile by Molecular Monolayer Doping and Microwave Annealing
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Lee, Y. -J.; Cho, T. -C.; Kao, K. -H.; Sung, P. -J.; Hsueh, F. -K.; Huang, P. -C.; Wu, C. -T.; Hsu, S. -H.; Huang, W. -H.; Chen, H. -C.; Li, Y.; Current, M. I.; Hengstebeck, B.; Marino, J.; Bueyueklimanli, T.; Shieh, J. -M.; Chao, T. -S.; Wu, W. -F.; Yeh, W. -K. |
| 國立成功大學 |
2017 |
Ultra-shallow junction formation by monolayer doping process in single crystalline Si and Ge for future CMOS devices
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Chuang, S.-S.;Cho, T.-C.;Sung, P.-J.;Kao, Kao K.-H.;Chen, H.J.H.;Lee, Y.-J.;Current, M.I.;Tseng, Tseng T.-Y. |
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