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Showing items 21-70 of 83 (2 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T08:46:15Z	Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect	C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:33Z	Digital compensation design method and digital compensation for a switching mode power supply	W.-H. Chang;D. Chen; W.-H. Chang; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T08:18:33Z	Digital compensation design method and digital compensation for a switching mode power supply	W.-H. Chang;D. Chen; W.-H. Chang; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect	C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect	C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:05Z	Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device	H. J. Hung;J. B. kuo;D. Chen;C. T. Tsai;C. S. Yeh; H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:05Z	Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device	H. J. Hung;J. B. kuo;D. Chen;C. T. Tsai;C. S. Yeh; H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:42:21Z	Nondestructive RBSOA Tester for High Power Bipolar Power Transistors	F. C. Lee; D. Chen; DAN CHEN; G. Carpenter; G. Carpenter;F. C. Lee;D. Chen
臺大學術典藏	2018-09-10T07:42:21Z	Nondestructive RBSOA Tester for High Power Bipolar Power Transistors	F. C. Lee; D. Chen; DAN CHEN; G. Carpenter; G. Carpenter;F. C. Lee;D. Chen
臺大學術典藏	2018-09-10T07:42:20Z	Optical laser Analog-to-Digital Converter	S. Reid;D. Chen; S. Reid; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T07:42:20Z	Optical laser Analog-to-Digital Converter	S. Reid;D. Chen; S. Reid; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T07:41:38Z	Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device	H. J. Hung;J. B. Kuo;C. T. Tsai;D. Chen; H. J. Hung; J. B. Kuo; C. T. Tsai; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:38Z	Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device	H. J. Hung;J. B. Kuo;C. T. Tsai;D. Chen; H. J. Hung; J. B. Kuo; C. T. Tsai; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device	J. I. Lu;H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai; J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device	J. I. Lu;H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai; J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device	H. J. Hung;J. I. Lu;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. I. Lu; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device	H. J. Hung;J. I. Lu;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. I. Lu; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:52Z	Modeling and design of feedback loops for a voltage-mode single-inductor dual-output buck converter	K.-Y. Lin;C.-S. Huang;D. Chen;K.-H. Liu; K.-Y. Lin; C.-S. Huang; D. Chen; K.-H. Liu; DAN CHEN
臺大學術典藏	2018-09-10T07:08:52Z	Modeling and design of feedback loops for a voltage-mode single-inductor dual-output buck converter	K.-Y. Lin;C.-S. Huang;D. Chen;K.-H. Liu; K.-Y. Lin; C.-S. Huang; D. Chen; K.-H. Liu; DAN CHEN
臺大學術典藏	2018-09-10T07:08:51Z	A Digital boost converter to drive white LEDs	W.-H. Chang;D. Chen;H.-S. Nien;C.-H. Chen; W.-H. Chang; D. Chen; H.-S. Nien; C.-H. Chen; DAN CHEN
臺大學術典藏	2018-09-10T07:08:51Z	A Digital boost converter to drive white LEDs	W.-H. Chang;D. Chen;H.-S. Nien;C.-H. Chen; W.-H. Chang; D. Chen; H.-S. Nien; C.-H. Chen; DAN CHEN
臺大學術典藏	2018-09-10T07:08:51Z	Design and modeling of a novel high-gain peak current control scheme to achieve adaptive voltage positioning for DC power converters	C.-J. Chen;D. Chen;M. Lee;E. K.-L. Tseng; C.-J. Chen; D. Chen; M. Lee; E. K.-L. Tseng; DAN CHEN; CHING-JAN CHEN
臺大學術典藏	2018-09-10T07:08:51Z	Design and modeling of a novel high-gain peak current control scheme to achieve adaptive voltage positioning for DC power converters	C.-J. Chen;D. Chen;M. Lee;E. K.-L. Tseng; C.-J. Chen; D. Chen; M. Lee; E. K.-L. Tseng; DAN CHEN; CHING-JAN CHEN
臺大學術典藏	2018-09-10T07:08:51Z	Small-signal modeling of DC converters with digital peak-current-mode control	H.-S. Nien;D. Chen;W.-H. Chang; H.-S. Nien; D. Chen; W.-H. Chang; DAN CHEN
臺大學術典藏	2018-09-10T07:08:51Z	Small-signal modeling of DC converters with digital peak-current-mode control	H.-S. Nien;D. Chen;W.-H. Chang; H.-S. Nien; D. Chen; W.-H. Chang; DAN CHEN
臺大學術典藏	2018-09-10T07:08:49Z	Use of a Cz Common-Mode Capacitor in Two Wire and Three -Wire Off-Line Supplies	H.-I. Hsieh; L. Huang; T.-C. Lin; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T07:08:18Z	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device	I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device	I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices	I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:18Z	STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices	J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T06:37:18Z	A novel soft-switching bridgeless power factor correction circuit	H.-Y. Tsai; T.-H. Hsia; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T06:37:17Z	Native AVP Control Method for Constant Output Impedance of DC Power Converters	J. R. Huang; S. C. H. Wang; C. J. Lee; E. K. L. Tseng; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T06:35:00Z	STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices	J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO; I. Lin; V. Su
臺大學術典藏	2018-09-10T06:35:00Z	Influence of STI-induced mechnical stress in kink effect of 65nm PD SOI CMOS devices	I. Lin; V. Su; J. Kuo; R. Lee; G. Lin; D. Chen; C. Yeh; C. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:51Z	Driver chip design considerations for VRM applications	K. B. Chen; D. Chen; J. Liu; S. Juang; DAN CHEN
臺大學術典藏	2018-09-10T06:02:50Z	A novel output voltage dip preventing circuit for synchronous buck converters	P.-Y. Chen; D. Chen; C.-W. Liu; F. Y. Shi; DAN CHEN
臺大學術典藏	2018-09-10T05:27:22Z	Hybrid Power Semiconductor Switch	D. Chen; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T05:27:22Z	Hybrid Power Semiconductor Switch	D. Chen; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T05:27:21Z	Use of a Cz Common-Mode Capacitor in 2-wire and 3-wire Off-line Power Supplies	H.-I Hsieh; T.-C. Lin; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T05:27:21Z	Simulation and Analysis of Conducted EMI for a Commercial DC/DC Power Module	P.-H. Liu; D. Chen; C.-W. Liu; S.-Y. Wang; DAN CHEN
臺大學術典藏	2018-09-10T05:27:21Z	A novel output voltage dip preventing circuit for synchronous buck converters	P.-Y. Chen; D. Chen; C.-W. Liu; F.-Y. Shi; DAN CHEN
臺大學術典藏	2018-09-10T04:59:32Z	A filter design procedure incorporating mixed-mode EMI noise for off-line switching power supplies	H.-I Hsieh; D. Chen; Q. Song; DAN CHEN

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