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機構	日期	題名	作者
臺大學術典藏	2018-09-10T09:50:25Z	Function of the Upper/Lower Parasitic BJTs in 40nm PD SOI NMOS Device due to the Back-Gate Bias Effect	A. P. Chuang;S. I. Su;Z. H. Yang;J. B. Kuo;D. Chen;C. S. Yeh; A. P. Chuang; S. I. Su; Z. H. Yang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Function of the Upper/Lower Parasitic BJTs in 40nm PD SOI NMOS Device due to the Back-Gate Bias Effect	A. P. Chuang;S. I. Su;Z. H. Yang;J. B. Kuo;D. Chen;C. S. Yeh; A. P. Chuang; S. I. Su; Z. H. Yang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect	D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
臺大學術典藏	2018-09-10T09:50:25Z	Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect	D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
臺大學術典藏	2018-09-10T09:25:08Z	Multi-Phase Power Converter and Control Circuit and Method Thereof,	C.-J. Chen;C.-S. Huang;K.-L. Tseng;D. Chen; C.-J. Chen; C.-S. Huang; K.-L. Tseng; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T09:25:08Z	Multi-Phase Power Converter and Control Circuit and Method Thereof,	C.-J. Chen;C.-S. Huang;K.-L. Tseng;D. Chen; C.-J. Chen; C.-S. Huang; K.-L. Tseng; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T09:24:48Z	Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect	S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:43Z	A Novel Adaptive Precision Overpower Protection Scheme for Primary-Side Flyback Converters	P.-L. Huang; D. Chen; C.-J. Chen; Y.-M. Chen; DAN CHEN
臺大學術典藏	2018-09-10T08:46:42Z	An novel Adaptive High-Precision Overpower Protection Scheme for Primary-Side Controlled Flyback Converters	P.-L. Huang; D. Chen; C.-J. Chen; Y.-M. Chen; DAN CHEN; CHING-JAN CHEN
臺大學術典藏	2018-09-10T08:46:16Z	Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model	S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:15Z	Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect	C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:33Z	Digital compensation design method and digital compensation for a switching mode power supply	W.-H. Chang;D. Chen; W.-H. Chang; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T08:18:33Z	Digital compensation design method and digital compensation for a switching mode power supply	W.-H. Chang;D. Chen; W.-H. Chang; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect	C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect	C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:05Z	Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device	H. J. Hung;J. B. kuo;D. Chen;C. T. Tsai;C. S. Yeh; H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:05Z	Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device	H. J. Hung;J. B. kuo;D. Chen;C. T. Tsai;C. S. Yeh; H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:42:21Z	Nondestructive RBSOA Tester for High Power Bipolar Power Transistors	F. C. Lee; D. Chen; DAN CHEN; G. Carpenter; G. Carpenter;F. C. Lee;D. Chen
臺大學術典藏	2018-09-10T07:42:21Z	Nondestructive RBSOA Tester for High Power Bipolar Power Transistors	F. C. Lee; D. Chen; DAN CHEN; G. Carpenter; G. Carpenter;F. C. Lee;D. Chen
臺大學術典藏	2018-09-10T07:42:20Z	Optical laser Analog-to-Digital Converter	S. Reid;D. Chen; S. Reid; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T07:42:20Z	Optical laser Analog-to-Digital Converter	S. Reid;D. Chen; S. Reid; D. Chen; DAN CHEN

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