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Taiwan Academic Institutional Repository >
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"dai bt"
Showing items 11-20 of 56 (6 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
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Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:28Z |
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:21Z |
Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs
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Tseng, CH; Chang, TK; Chu, FT; Shieh, JM; Dai, BT; Cheng, HC; Chin, A |
| 國立交通大學 |
2014-12-08T15:42:19Z |
Reduction of resistivity of electroplated copper by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H-2 plasma treatment
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Shieh, JM; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Wetting effect on gap filling submicron damascene by an electrolyte free of levelers
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:42:09Z |
Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
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Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:01Z |
The effect of plating current densities on self-annealing Behaviors of electroplated copper films
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:42:00Z |
Microleveling mechanisms and applications of electropolishing on planarization of copper metallization
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Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Li, YH; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:49Z |
Leveling effects of copper electrolytes with hybrid-mode additives
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; Li, YH |
Showing items 11-20 of 56 (6 Page(s) Totally)
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