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"dai bt"
Showing items 46-55 of 56 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:03:25Z |
EFFECTS OF POLYSILICON ELECTRON-CYCLOTRON-RESONANCE ETCHING ON ELECTRICAL CHARACTERISTICS OF GATE OXIDES
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KANG, TK; UENG, SY; DAI, BT; CHEN, LP; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:11Z |
CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMS
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LIU, CW; DAI, BT; YEH, CF |
| 國立交通大學 |
2014-12-08T15:03:02Z |
Chemical mechanical polishing of PSG and BPSG dielectric films: The effect of phosphorus and boron concentration
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Liu, CW; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etching
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Kang, TK; Ueng, SY; Dai, BT; Chen, LP; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:52Z |
Modeling of the wear mechanism during chemical-mechanical polishing
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Liu, CW; Dai, BT; Tseng, WT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:50Z |
Post cleaning of chemical mechanical polishing process
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Liu, CW; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:49Z |
Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films
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Chang, CY; Lin, HY; Lei, TF; Cheng, JY; Chen, LP; Dai, BT |
| 國立交通大學 |
2014-12-08T15:02:33Z |
A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching
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Cheng, HC; Kang, TK; Ku, TK; Dai, BT; Chen, LP |
| 國立交通大學 |
2014-12-08T15:02:11Z |
Effects of mechanical characteristics on the chemical-mechanical polishing of dielectric thin films
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Tseng, WT; Liu, CW; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:01:16Z |
Charging damages to gate oxides in a helicon O-2 plasma
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Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
Showing items 46-55 of 56 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
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