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Showing items 36-45 of 56 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:27:11Z |
A study on electrochemical metrologies for evaluating the removal selectivity of AlCMP
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Chiu, SY; Hsu, JW; Tung, IC; Shih, HC; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Evaluation of impurity migration and microwave digestion methods for lithographic materials
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Ko, FH; Hsiao, LT; Chou, CT; Wang, MY; Wang, TK; Sun, YC; Cheng, BJ; Yeng, S; Dai, BT |
| 國立交通大學 |
2014-12-08T15:27:05Z |
Study on chemical-mechanical polishing of low dielectric constant polyimide thin films
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Tai, YL; Tsai, MS; Tung, IC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:56Z |
Film characterization and evaluation of process performance for the modified electron beam resist
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Ko, FH; Ting, JH; Chou, CT; Hsiao, LT; Huang, TY; Dai, BT |
| 國立交通大學 |
2014-12-08T15:26:56Z |
Technology of electroplating copper with low-K material a-C : F for 0.15 mu m damascene interconnection
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Shieh, JM; Suen, SC; Lin, KC; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing
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Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:35Z |
Study on pressure-independent Cu removal in Cu abrasive-free polishing
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Fang, JY; Huang, PW; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:03Z |
Dopant profile engineering by near-infrared femtosecond laser activation
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Wang, YC; Pan, CL; Shieh, JM; Dai, BT |
| 國立交通大學 |
2014-12-08T15:16:39Z |
Aging influence of poly(ethylene glycol) suppressors of Cu electrolytes on gaps filling
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Liu, SH; Li, TC; Chen, C; Shieh, JM; Dai, BT; Hensen, K; Cheng, SS |
| 國立交通大學 |
2014-12-08T15:03:25Z |
IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATES
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UENG, SY; WANG, PW; KANG, TK; CHAO, TS; CHEN, WH; DAI, BT; CHENG, HC |
Showing items 36-45 of 56 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
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