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机构 日期 题名 作者
國立成功大學 2024-12-1 A Hardware Friendly Variation-Tolerant Framework for RRAM-Based Neuromorphic Computing Gu;Fang-Yi;Yang;Cheng-Han;Lin;Ing-Chao;Chang;Da-Wei;Lu;Darsen, Darsen D.;Schlichtmann;Ulf
國立成功大學 2024 Numerical Simulations of Gate-Granularity- Induced Subthreshold Characteristics Deterioration of MOSFETs Magnified at Cryogenic Temperatures Kao;Kuo-Hsing;Wang;Zong-Hong;Pai;Yu-Chia;Cheng;Chen-Chi;Lu;Darsen, Darsen D.;Lee;Wen-Jay;Chen;Nan-Yow
國立成功大學 2023-12 Bilayered Oxide Heterostructure-Mediated Capacitance-Based Neuroplasticity Modulation for Neuromorphic Classification Lin;Pei-En;Chen;Kuan-Ting;Chaurasiya;Rajneesh;Le;Hoang-Hiep;Cheng;Chia-Hao;Lu;Darsen, Darsen D.;Chen;Jen-Sue
國立成功大學 2023-05-8 HfTaOX Rectifying Layer for HfOX-Based RRAM for High-Accuracy Neuromorphic Applications Chang;Ting-Jia;Le;Hoang-Hiep;Li;Cheng-Ying;Chu;Sheng-Yuan;Lu;Darsen, Darsen D.
國立成功大學 2023-03 TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET Chang;Shu-Wei;Chou;Jia-Hon;Lee;Wen-Hsi;Lee;Yao-Jen;Lu;Darsen, Darsen D.
國立成功大學 2022-09-1 Nanosheet-Compatible Complementary-Field Effect Transistor Logic Non-Volatile Memory Device Chang;Shu-Wei;Chang;Yu-Ming;Lee;Wen-Hsi;Lee;Yao-Jen;Lu;Darsen, Darsen D.
國立成功大學 2022-03-22 Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application Pal;Parthasarathi;Mazumder;Soumen;Huang;Chih-Wei;Lu;Darsen, Darsen D.;Wang;Yeong-Her
國立成功大學 2022-02 Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack Baig;Aftab, Md;Le;Hoang-Hiep;De;Sourav;Chang;Che-Wei;Hsieh;Chia-Chi;Huang;Xiao-Shan;Lee;Yao-Jen;Lu;Darsen, Darsen D.
國立成功大學 2021-08 Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses De;Sourav;Le;Hoang-Hiep;Qiu;Bo-Han;Baig;Aftab, Md;Sung;Po-Jung;Su;Chun-Jung;Lee;Yao-Jen;Lu;Darsen, Darsen D.
國立成功大學 2021-02-23 Uniform Crystal Formation and Electrical Variability Reduction in Hafnium-Oxide-Based Ferroelectric Memory by Thermal Engineering De;Sourav;Qu;Bo-Han;Bu;Wei-Xuan;Baig;Aftab, Mohammad;Sung;Jung, Po;Su;Jung, Chun;Lee;Yao-Jen;Lu;Darsen, Darsen D.

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