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机构 日期 题名 作者
國立交通大學 2018-08-21T05:53:19Z Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi
國立交通大學 2018-08-21T05:53:14Z AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:56Z Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications Hsieh, Ting-En; Lin, Yueh-Chin; Chu, Chung-Ming; Chuang, Yu-Lin; Huang, Yu-Xiang; Shi, Wang-Cheng; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Lee, Wei-I; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:48Z Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:41Z Reliability study of high-k La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal-oxide-semiconductor capacitor Chu, Chung-Ming; Lin, Yueh-Chin; Lee, Wei-I; Dee, Chang Fu; Wong, Yuen-Yee; Majlis, Burhanuddin Yeop; Salleh, Muhamad Mat; Yap, Seong Ling; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:41Z The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method Huang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L.
國立交通大學 2016-03-28T00:04:26Z Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi
國立交通大學 2015-07-21T11:20:35Z Porous (001)-faceted Zn-doped anatase TiO2 nanowalls and their heterogeneous photocatalytic characterization Saad, Siti Khatijah Md; Umar, Akrajas Ali; Hong Quan Nguyen; Dee, Chang Fu; Salleh, Muhamad Mat; Oyama, Munetaka
國立交通大學 2015-07-21T08:30:56Z Hydrothermal growth of ZnO nanotubes on InGaP/GaAs/Ge Solar Cells Chung, Chen-Chen; Lin, Kung-Liang; Yu, Hung-Wei; Quan, Nguyen-Hong; Dee, Chang-Fu; Chang, Edward Yi
國立交通大學 2014-12-08T15:36:38Z The growth of pine-leaf-like hierarchical SnO2 nanostructures Dee, Chang Fu; Tiong, Teck Yaw; Varghese, Binni; Sow, Chorng-Haur; Wong, Yuan-Yee; Ahmad, Ishaq; Husnain, G.; Yi-Chang, Edward; Hsiao, Yu-Lin; Yu, Hung-Wei; Nguyen, Hong-Quan; Salleh, Muhamad Mat; Majlis, Burhanuddin Yeop

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