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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"deng ic"的相關文件
顯示項目 1-10 / 16 (共2頁)
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| 國立交通大學 |
2019-04-02T06:00:01Z |
Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization
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Chang, KM; Yeh, TH; Deng, IC |
| 國立交通大學 |
2019-04-02T05:59:47Z |
Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition
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Chang, KM; Yeh, TH; Deng, IC; Shih, CW |
| 國立交通大學 |
2014-12-08T15:48:44Z |
The characteristics of chemical vapor deposited amorphous-like tungsten film as a gate electrode
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Chang, KM; Deng, IC; Shih, CW; Lain, KD; Fu, CM |
| 國立交通大學 |
2014-12-08T15:46:52Z |
Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system
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Chang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment
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Chang, KM; Deng, IC; Yeh, TH; Shih, CW |
| 國立交通大學 |
2014-12-08T15:46:21Z |
Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film
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Chang, KM; Deng, IC; Lin, HY |
| 國立交通大學 |
2014-12-08T15:45:58Z |
Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment
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Chang, KM; Deng, IC; Yeh, SJ; Tsai, YP |
| 國立交通大學 |
2014-12-08T15:45:21Z |
Using NH3 plasma treatment to improve the characteristics of hydrogen silsesquioxane for copper interconnection application
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Chang, KM; Deng, IC; Yeh, SJ; Tsai, YP |
| 國立交通大學 |
2014-12-08T15:45:15Z |
A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance
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Chang, KM; Deng, IC; Tsai, YP; Wen, CY; Yeh, SJ; Wang, SW; Wang, JY |
| 國立交通大學 |
2014-12-08T15:43:15Z |
Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization
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Chang, KM; Tseng, MH; Deng, IC; Tsai, YP; Yeh, SJ |
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