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Institution	Date	Title	Author
國立高雄師範大學	2012-04	Comparative Study of InGaP/GaAs High Electron Mobility Transistors with Upper and Lower Delta-Doped Supplied Layers	Jung-Hui Tsai;Sheng-Shiun Ye;Der-Feng Guo;Wen-Shiung Lour; 蔡榮輝
國立臺灣海洋大學	2012	Comparative Study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers	Jung-Hui Tsai;Sheng-Shiun Ye;Der-Feng Guo;Wen-Shiung Lour
國立臺灣海洋大學	2011-09-17	Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles	Jung-Hui Tsai; Der-Feng Guo; Wen-Shiung Lour
國立臺灣海洋大學	2011-05	InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure	Wen-Shiung Lour; Ning-Feng Dale; Yuan-Hong Lee; Der-Feng Guo; Jung-Hui Tsai
國立高雄師範大學	2011	Comparative investigation of InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles	Jung-Hui Tsai;Der-Feng Guo;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2011	High-performance InGaP/GaAs tunneling heterostructure-emitter bipolar transistor	Jung-Hui Tsai;Chia-Hong Huang;Der-Feng Guo;Wen-Shiung Lour;Yung-Chun Ma;Sheng-Shiun Ye;Jia-Cing Jhou;Jhih-Jhong Ou-Yang;You-Ren Wu; 蔡榮輝
國立臺灣海洋大學	2010-08-18	InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures	Jung-Hui Tsai; Wen-Shiung Lour; Der-Feng Guo; Wen-Chau Liu; Yi-Zhen Wu; Ying-Feng Dai
國立臺灣海洋大學	2010-07-26	InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure	Jung-Hui Tsai; Der-Feng Guo; Yuan-Hong Lee; Ning-Feng Dale; Wen-Shiung Lour
國立臺灣海洋大學	2010-07-26	InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure	Jung-Hui Tsai; Der-Feng Guo; Yuan-Hong Lee; Ning-Feng Dale; Wen-Shiung Lour
國立高雄師範大學	2010	InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures	Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu;Yi-Zhen Wu;Ying-Feng Dai; 蔡榮輝
國立高雄師範大學	2010	InGaP/GaAs/InGaAs doped-Channel field-Effect transistor using camel-Like gate structure	Jung-Hui Tsai;Der-Feng Guo;Yuan-Hong Lee;Ying-Feng Da;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2010	InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure	Jung-Hui Tsai;Der-Feng Guo;Yuan-Hong Lee;Ying-Feng Dai;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2010	High-performance InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)	Jung-Hui Tsai;Der-Feng Guo; 蔡榮輝
國立高雄師範大學	2010	Investigation in heterostructural optoelectronic devices	Jung-Hui Tsai;Der-Feng Guo; 蔡榮輝
國立臺灣海洋大學	2009-11	Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors	Wen-Chau Liu; Ghun-Wei Ku; Der-Feng Guo; Jung-Hui Tsai; Wen-Shiung Lour; Shiou-Ying Cheng; Chi-Jhung Lee; Tzu-Pin Chen
國立高雄師範大學	2009	High-Performance InGaP/GaAs pnp δ-Doped Heterojunction Bipolar Transistor	Jung-Hui Tsai; Shao-Yen Chiu;Wen-Shiung Lou;Der-Feng Guo; 蔡榮輝
國立高雄師範大學	2009	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Ghun-Wei Ku;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	An optoelectronic switch	Jung-Hui Tsai;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2009	InGaP/InGaAs doped-channel heterostructure field-effect transistors s for complementary logic inverter application	Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Chien-Ming Li;Yuan-Hong Lee; 蔡榮輝
國立高雄師範大學	2009	High device linearity of pseudomorphic doped-channel field-effect transistor using InGaP/GaAs/InGaAs camel-like gate heterostructure	Jung-Hui Tsai;Der-Feng Guo;Ning-Xing Su;Yin-Shan Huang;Wen-Chau Liu; 蔡榮輝
國立臺灣海洋大學	2009	On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)	Tzu-Pin Chen; Chi-Jhung Lee; Wen-Shiung Lour; Der-Feng Guo; Jung-Hui Tsai; Wen-Chau Liu
國立臺灣海洋大學	2008-12-09	Effect of Emitter Ledge Thickness on InGaP ∕ GaAs Heterojunction Bipolar Transistors	Tzu-Pin Chen; Chi-Jhung Lee; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Ghun-Wei Ku; Wen-Chau Liu
國立高雄師範大學	2008	Effect of non-annealed Ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Jung-Hui Tsai;Li-Yang Chen;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Tsung-Han Tsai;Tzu-Pin Chen;Yi-Chun Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2008	Investigation on heterostructural optoelectronic switches	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Chih-Hung Yeng;Po-Hsien Lai;Ssu-Yi Fu;Ching-Wen Hung;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2008	Electrical properties of InP/InGaAs pnp heterostructure-emitter bipolar transistor	Jung-Hui Tsai;Wen-Chau Liu;Der-Feng Guo;Yu-Chi Kang;Shao-Yen Chiu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2008	Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Der-Feng Guo;Yu-Chi Kang;Tzu-Yen Weng; 蔡榮輝
國立臺灣海洋大學	2008	Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Li-Yang Chen; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Tsung-Han Tsai; Tzu-Pin Chen; Yi-Chun Liu; Wen-Chau Liu
國立高雄師範大學	2007	Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs	Jung-Hui Tsai;Chien-Ming Li;Wen-Chau Liu;Der-Feng Guo;Shao-Yen Chiu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2007	Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Shiou-Ying Cheng;Der-Feng Guo;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector	Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors	Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	A pnpn GaAs-InGaAs optoelectronic switch	Jung-Hui Tsai;Der-Feng Guo;Chien-Ming Li; 蔡榮輝
國立高雄師範大學	2007	An Optoelectronic Switch with Multiple Operation States	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng; 蔡榮輝
國立高雄師範大學	2007	A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor	Jung-Hui Tsai;Yan-Ying Tsai;Shiou-Ying Cheng;Der-Feng Guo;Huey-Ing Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Optoelectronic switch with S-shaped negative differential resistance	Jung-Hui Tsai;Der-Feng Guo;Ming-Yue Fu; 蔡榮輝
國立高雄師範大學	2007	A multiple-operation-state optoelectronic switch	Jung-Hui Tsai;Der-Feng Guo;Ming-Yue Fu; 蔡榮輝
國立高雄師範大學	2007	Investigation on heterostructural optoelectronic switches	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Chih-Hung Yeng;Po-Hsien Lai;Ssu-Yi Fu;Ching-Wen Hung;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT	Jung-Hui Tsai;Der-Feng Guo;Yu-Chi Kang;Tzu-Yen Weng; 蔡榮輝
國立臺灣海洋大學	2007	Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector	Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
國立臺灣海洋大學	2007	Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors	Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
國立高雄師範大學	2006	Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)	Jung-Hui Tsai;Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2006	Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltag	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2006	Investigation of an InGaP/GaAs/InGaAs step-emitter bipolar transistor	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Ching-Han Wu; 蔡榮輝
國立高雄師範大學	2006	An improved InP/InGaAs pnp HBT with d-doped sheet between emitter-base junction	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Yu-Chi Kang;Ching-Han Wu;I-Hsuan Hsu; 蔡榮輝
國立高雄師範大學	2006	An optoelectronic switch with multiple operation states	Jung-Hui Tsai;Tzu-Yen Weng;Der-Feng Guo; 蔡榮輝
國立高雄師範大學	2006	An AlGaAs/GaAs/InAlGaP optoelectronic switch	Jung-Hui Tsai;Tzu-Yen Weng;Der-Feng Guo; 蔡榮輝
國立臺灣海洋大學	2006	Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)	Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Jung-Hui Tsai;Wen-Chau Liu
國立臺灣海洋大學	2006	Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor	Tzu-Pin Chen;Ssu-I Fu;Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Shiou-Ying Cheng;Wen-Chau Liu

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