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Showing items 11-20 of 53  (6 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 2010 InGaP/GaAs/InGaAs doped-Channel field-Effect transistor using camel-Like gate structure Jung-Hui Tsai;Der-Feng Guo;Yuan-Hong Lee;Ying-Feng Da;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學 2010 InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure Jung-Hui Tsai;Der-Feng Guo;Yuan-Hong Lee;Ying-Feng Dai;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學 2010 High-performance InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) Jung-Hui Tsai;Der-Feng Guo; 蔡榮輝
國立高雄師範大學 2010 Investigation in heterostructural optoelectronic devices Jung-Hui Tsai;Der-Feng Guo; 蔡榮輝
國立臺灣海洋大學 2009-11 Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors Wen-Chau Liu; Ghun-Wei Ku; Der-Feng Guo; Jung-Hui Tsai; Wen-Shiung Lour; Shiou-Ying Cheng; Chi-Jhung Lee; Tzu-Pin Chen
國立高雄師範大學 2009 High-Performance InGaP/GaAs pnp δ-Doped Heterojunction Bipolar Transistor Jung-Hui Tsai; Shao-Yen Chiu;Wen-Shiung Lou;Der-Feng Guo; 蔡榮輝
國立高雄師範大學 2009 On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs) Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistors Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Wen-Shiung Lour;Der-Feng Guo;Ghun-Wei Ku;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 An optoelectronic switch Jung-Hui Tsai;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 InGaP/InGaAs doped-channel heterostructure field-effect transistors s for complementary logic inverter application Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Chien-Ming Li;Yuan-Hong Lee; 蔡榮輝

Showing items 11-20 of 53  (6 Page(s) Totally)
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