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機構	日期	題名	作者
國立高雄師範大學	2007	Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector	Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors	Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	A pnpn GaAs-InGaAs optoelectronic switch	Jung-Hui Tsai;Der-Feng Guo;Chien-Ming Li; 蔡榮輝
國立高雄師範大學	2007	An Optoelectronic Switch with Multiple Operation States	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng; 蔡榮輝
國立高雄師範大學	2007	A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor	Jung-Hui Tsai;Yan-Ying Tsai;Shiou-Ying Cheng;Der-Feng Guo;Huey-Ing Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Optoelectronic switch with S-shaped negative differential resistance	Jung-Hui Tsai;Der-Feng Guo;Ming-Yue Fu; 蔡榮輝
國立高雄師範大學	2007	A multiple-operation-state optoelectronic switch	Jung-Hui Tsai;Der-Feng Guo;Ming-Yue Fu; 蔡榮輝
國立高雄師範大學	2007	Investigation on heterostructural optoelectronic switches	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Chih-Hung Yeng;Po-Hsien Lai;Ssu-Yi Fu;Ching-Wen Hung;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT	Jung-Hui Tsai;Der-Feng Guo;Yu-Chi Kang;Tzu-Yen Weng; 蔡榮輝
國立臺灣海洋大學	2007	Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector	Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
國立臺灣海洋大學	2007	Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors	Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
國立高雄師範大學	2006	Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)	Jung-Hui Tsai;Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2006	Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltag	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2006	Investigation of an InGaP/GaAs/InGaAs step-emitter bipolar transistor	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Ching-Han Wu; 蔡榮輝
國立高雄師範大學	2006	An improved InP/InGaAs pnp HBT with d-doped sheet between emitter-base junction	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Yu-Chi Kang;Ching-Han Wu;I-Hsuan Hsu; 蔡榮輝
國立高雄師範大學	2006	An optoelectronic switch with multiple operation states	Jung-Hui Tsai;Tzu-Yen Weng;Der-Feng Guo; 蔡榮輝
國立高雄師範大學	2006	An AlGaAs/GaAs/InAlGaP optoelectronic switch	Jung-Hui Tsai;Tzu-Yen Weng;Der-Feng Guo; 蔡榮輝
國立臺灣海洋大學	2006	Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)	Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Jung-Hui Tsai;Wen-Chau Liu
國立臺灣海洋大學	2006	Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor	Tzu-Pin Chen;Ssu-I Fu;Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Shiou-Ying Cheng;Wen-Chau Liu
國立臺灣海洋大學	2005	Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu
國立高雄師範大學	1995	Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch	Jung-Hui Tsai;Der-Feng Guo;Lih-Wen Laih;Wen-Chau Liu;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	1995	Application of InGaAs-GaAs delta-doped quantum wells to bolk-barrier switching devices	Jung-Hui Tsai;Der-Feng Guo;Lih-Wen Laih;Wen-Chau Liu; 蔡榮輝

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