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Taiwan Academic Institutional Repository >
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"diaz carlos h"
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| 臺大學術典藏 |
2021-05-24T13:07:42Z |
Challenges toward Low-Power SOT-MRAM
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Lin, Shy Jay; Huang, Yen Lin; Song, Ming Yaun; Lee, Chien Ming; Xue, Fen; Chen, Guan Long; Yang, Shan Yi; Chang, Yao Jen; Wang, I. Jung; Hsin, Yu Chen; Su, Yi Hui; Wei, Jeng Hua; CHI-FENG PAI; Wang, Shan X.; Diaz, Carlos H. |
| 國立交通大學 |
2020-10-05T02:01:09Z |
Design Space Analysis for Cross-Point 1S1MTJ MRAM: Selector-MTJ Cooptimization
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Chiang, Hung-Li; Chen, Tzu-Chiang; Song, Ming-Yuan; Chen, Yu-Sheng; Chiu, Jung-Piao; Chiang, Katherine; Manfrini, Mauricio; Cai, Jin; Gallagher, William J.; Wang, Tahui; Diaz, Carlos H.; Wong, H. -S. Philip |
| 國立成功大學 |
2015-06-15 |
Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique
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Shen, T. M.; Wang, S. J.; Tung, Y. T.; Hwang, R. L.; Wu, C. C.; Wu, Jeff; Diaz, Carlos H. |
| 國立交通大學 |
2014-12-08T15:36:08Z |
Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate
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Lin, Yueh-Chin; Huang, Mao-Lin; Chen, Chen-Yu; Chen, Meng-Ku; Lin, Hung-Ta; Tsai, Pang-Yan; Lin, Chun-Hsiung; Chang, Hui-Cheng; Lee, Tze-Liang; Lo, Chia-Chiung; Jang, Syun-Ming; Diaz, Carlos H.; Hwang, He-Yong; Sun, Yuan-Chen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:32:15Z |
Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
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Lin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:30:40Z |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
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Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 國立交通大學 |
2014-12-08T15:16:09Z |
Reproducing subthreshold characteristics of metal-oxide-semiconductor field effect transistors under shallow trench isolation mechanical stress using a stress-dependent diffusion model
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Sheu, Yi-Ming; Yang, Sheng-Jier; Wang, Chih-Chiang; Chang, Chih-Sheng; Chen, Ming-Jer; Liu, Sally; Diaz, Carlos H. |
| 國立交通大學 |
2014-12-08T15:11:01Z |
A millisecond-anneal-assisted selective fully silicided (FUSI) gate process
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Lin, Da-Wen; Wang, Maureen; Cheng, Ming-Lung; Sheu, Yi-Ming; Tarng, Bennet; Chu, Che-Min; Nieh, Chun-Wen; Lo, Chia-Ping; Tsai, Wen-Chi; Lin, Rachel; Wang, Shyh-Wei; Cheng, Kuan-Lun; Wu, Chii-Ming; Lei, Ming-Ta; Wu, Chung-Cheng; Diaz, Carlos H.; Chen, Ming-Jer |
| 國立交通大學 |
2014-12-08T15:10:19Z |
Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
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Chen, William Po-Nien; Su, Pin; Goto, Ken-Ichi; Diaz, Carlos H. |
| 國立成功大學 |
2013-05 |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
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Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
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