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Institution Date Title Author
國立交通大學 2019-06-03T01:09:17Z First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack Luc, Q. H.; Fan-Chiang, C. C.; Huynh, S. H.; Huang, P.; Do, H. B.; Ha, M. T. H.; Jin, Y. D.; Nguyen, T. A.; Zhang, K. Y.; Wang, H. C.; Lin, Y. K.; Lin, Y. C.; Hu, C.; Iwai, H.; Chang, E. Y.

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