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| 國立成功大學 |
2014-04 |
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
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Wang, C. H.; Doornbos, G.; Astromskas, G.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Huang, M. L.; Lin, C. H.; Hsieh, C. H.; Chang, Y. S.; Lee, T. L.; Chen, Y. Y.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L. -E.; Droopad, R.; Passlack, M.; Diaz, C. H. |
| 國立成功大學 |
2013-09-30 |
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
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Wang, C. H.; Wang, S. W.; Doornbos, G.; Astromskas, G.; Bhuwalka, K.; Contreras-Guerrero, R.; Edirisooriya, M.; Rojas-Ramirez, J. S.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Hsieh, C. H.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L-E; Droopad, R.; Passlack, M.; Diaz, C. H. |
| 國立成功大學 |
2013-07-01 |
MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
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Ramvall, P.; Wang, C. H.; Astromskas, G.; Vellianitis, G.; Holland, M.; Droopad, R.; Samuelson, L.; Wernersson, L. E.; Passlack, M.; Diaz, C. H. |
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