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Institution Date Title Author
臺大學術典藏 2018-09-10T04:59:03Z A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI NMOS Devices Considering Fringing Electric Field Effects E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:19Z Asymmetric Gate Misalignment Effect on Subthreshold Characteristics DG SOI NMOS Devices Considering Fringing Electric Field Effect M. T. Lin; E. C. Sun; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T04:35:18Z Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effect J. B. Kuo; E. C. Sun; M. T. Lin; JAMES-B KUO

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