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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
元智大學 Nov-22 Effect of the Indium Compositions in Tri-Gate InxGa1−xAs HEMTs for High-Frequency Low Noise Application 李清庭; C. Wang; C. N. Kuo; Y. C. Lin; H. T. Hsu; Y. F. Tsao; E. Y. Chang
元智大學 Nov-14 Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application Che-Yang Chiang; H. T. Hsu; E. Y. Chang
元智大學 Mar-23 Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering 李清庭; Y. C. Weng; H. T. Hsu; Y. F. Tsao; D. Panda; H. Y. Huang; M. L. Kao; Y. P. Lan; E. Y. Chang
元智大學 Mar-23 Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering 李清庭; Y. C. Weng; H. T. Hsu; Y. F. Tsao; D. Panda; H. Y. Huang; M. L. Kao; Y. P. Lan; E. Y. Chang
元智大學 Jun-22 A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT 李清庭; C. Y. Yang; C. H. Chung; W. Yu; C. J. Ma; S. R. Wu; A. Dixit; E. Y. Chang
元智大學 Jul-22 Growth of Ultrathin barrier InAlGaN/GaN Heterostructures with Superior Properties Using Sputtered AlN/sapphire Templates and Optimized Group-III Injection Rate by Metalorganic Chemical Vapor Phase Deposition 李清庭; X. X. Zheng; C. Wang; J. H. Huang; J. Y. Huang; D. Ueda; K. Pande; C. F. Dee; E. Y. Chang
元智大學 Jul-14 Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active- Region Bumps Induced Piezoelectric Effect Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yung-Yi Tu; Chia-Hua Chang; Ting-En Hsieh; Huan-Chung Wang; Shih-Chien Liu; E. Y. Chang
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator 李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator 李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Dec-22 Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering 李清庭; C. Y. Yang; J. H. Wu; C. H. Chung; J. Y. You; T. C. Yu; C. J. Ma; D. Ueda; H. T. Hsu; E. Y. Chang
元智大學 Dec-22 InGaZnO Ferroelectric Thin-Film Transistor Using HfO2/Al2O3/AlN Hybrid Gate Dielectric Stack with Ultra-Large Memory Window 李清庭; C. Wang; C. N. Kuo; Y. C. Lin; H. T. Hsu; Y. F. Tsao; E. Y. Chang
元智大學 Dec-21 Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer 李清庭; J. J. Jian; H. Y. Lee; E. Y. Chang
元智大學 Aug-22 Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer 李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang
元智大學 Aug-21 AlGaN/GaN enhancement-mode MOSHEMTs utilizing hybrid gate-recessed structure and ferroelectric charge trapping/storage stacked LiNbO3/HfO2/Al2O3 structure 李清庭; H. Y. Lee; C. H. Lin; C. C. Wei; J. C. Yang; E. Y. Chang
元智大學 2014-7-1 Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
元智大學 2014-7-1 Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
國立交通大學 2014-12-12T02:51:18Z 砷化鎵及磷化銦異質接面雙載子電晶體之銅金屬化製程研究 張尚文; 張翼; E. Y. Chang
元智大學 2014-1-1 Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學 2014-1-1 Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學 2014-1-1 Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學 2014-07 Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
元智大學 2013-11 Effect of Indium Content on the Logic Performance of 80-nm Quantum-Well Field-Effect Transistors (QWFETs) Heng-Tung Hsu; Chien-I Kuo; Che-Yang Chiang; E. Y. Chang

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