臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

关于TAIR
	计画说明

浏览
	典藏机构
	作者
	题名
	日期
	统计图表
	机构即时统计
	学术趋势

消息
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

著作权
	出版社及期刊政策查询
	TAIR著作权会议记录

相关连结
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

"e y chang"的相关文件

回到依作者浏览
依题名排序	依日期排序

显示项目 1-25 / 40 (共2页)
1 2 > >>
每页显示[10|25|50]项目

机构	日期	题名	作者
元智大學	Nov-22	Effect of the Indium Compositions in Tri-Gate InxGa1−xAs HEMTs for High-Frequency Low Noise Application	李清庭; C. Wang; C. N. Kuo; Y. C. Lin; H. T. Hsu; Y. F. Tsao; E. Y. Chang
元智大學	Nov-14	Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application	Che-Yang Chiang; H. T. Hsu; E. Y. Chang
元智大學	Mar-23	Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering	李清庭; Y. C. Weng; H. T. Hsu; Y. F. Tsao; D. Panda; H. Y. Huang; M. L. Kao; Y. P. Lan; E. Y. Chang
元智大學	Mar-23	Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering	李清庭; Y. C. Weng; H. T. Hsu; Y. F. Tsao; D. Panda; H. Y. Huang; M. L. Kao; Y. P. Lan; E. Y. Chang
元智大學	Jun-22	A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT	李清庭; C. Y. Yang; C. H. Chung; W. Yu; C. J. Ma; S. R. Wu; A. Dixit; E. Y. Chang
元智大學	Jul-22	Growth of Ultrathin barrier InAlGaN/GaN Heterostructures with Superior Properties Using Sputtered AlN/sapphire Templates and Optimized Group-III Injection Rate by Metalorganic Chemical Vapor Phase Deposition	李清庭; X. X. Zheng; C. Wang; J. H. Huang; J. Y. Huang; D. Ueda; K. Pande; C. F. Dee; E. Y. Chang
元智大學	Jul-14	Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active- Region Bumps Induced Piezoelectric Effect	Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yung-Yi Tu; Chia-Hua Chang; Ting-En Hsieh; Huan-Chung Wang; Shih-Chien Liu; E. Y. Chang
元智大學	Feb-23	Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications	李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications	李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator	李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator	李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications	李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Dec-22	Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering	李清庭; C. Y. Yang; J. H. Wu; C. H. Chung; J. Y. You; T. C. Yu; C. J. Ma; D. Ueda; H. T. Hsu; E. Y. Chang
元智大學	Dec-22	InGaZnO Ferroelectric Thin-Film Transistor Using HfO2/Al2O3/AlN Hybrid Gate Dielectric Stack with Ultra-Large Memory Window	李清庭; C. Wang; C. N. Kuo; Y. C. Lin; H. T. Hsu; Y. F. Tsao; E. Y. Chang
元智大學	Dec-21	Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer	李清庭; J. J. Jian; H. Y. Lee; E. Y. Chang
元智大學	Aug-22	Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer	李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang
元智大學	Aug-21	AlGaN/GaN enhancement-mode MOSHEMTs utilizing hybrid gate-recessed structure and ferroelectric charge trapping/storage stacked LiNbO3/HfO2/Al2O3 structure	李清庭; H. Y. Lee; C. H. Lin; C. C. Wei; J. C. Yang; E. Y. Chang
元智大學	2014-7-1	Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect	Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
元智大學	2014-7-1	Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect	Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
國立交通大學	2014-12-12T02:51:18Z	砷化鎵及磷化銦異質接面雙載子電晶體之銅金屬化製程研究	張尚文; 張翼; E. Y. Chang
元智大學	2014-1-1	Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications	Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學	2014-1-1	Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications	Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學	2014-1-1	Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications	Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學	2014-07	Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect	Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
元智大學	2013-11	Effect of Indium Content on the Logic Performance of 80-nm Quantum-Well Field-Effect Transistors (QWFETs)	Heng-Tung Hsu; Chien-I Kuo; Che-Yang Chiang; E. Y. Chang

显示项目 1-25 / 40 (共2页)
1 2 > >>
每页显示[10|25|50]项目

	English \| 正體中文 \| 简体中文 \| 总笔数 :2828323
	造访人次 : 32242544 在线人数 : 4154 教育部委托研究计画计画执行:国立台湾大学图书馆