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机构	日期	题名	作者
元智大學	Feb-23	Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator	李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications	李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Dec-22	Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering	李清庭; C. Y. Yang; J. H. Wu; C. H. Chung; J. Y. You; T. C. Yu; C. J. Ma; D. Ueda; H. T. Hsu; E. Y. Chang
元智大學	Dec-22	InGaZnO Ferroelectric Thin-Film Transistor Using HfO2/Al2O3/AlN Hybrid Gate Dielectric Stack with Ultra-Large Memory Window	李清庭; C. Wang; C. N. Kuo; Y. C. Lin; H. T. Hsu; Y. F. Tsao; E. Y. Chang
元智大學	Dec-21	Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer	李清庭; J. J. Jian; H. Y. Lee; E. Y. Chang
元智大學	Aug-22	Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer	李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang
元智大學	Aug-21	AlGaN/GaN enhancement-mode MOSHEMTs utilizing hybrid gate-recessed structure and ferroelectric charge trapping/storage stacked LiNbO3/HfO2/Al2O3 structure	李清庭; H. Y. Lee; C. H. Lin; C. C. Wei; J. C. Yang; E. Y. Chang
元智大學	2014-7-1	Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect	Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
元智大學	2014-7-1	Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect	Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
國立交通大學	2014-12-12T02:51:18Z	砷化鎵及磷化銦異質接面雙載子電晶體之銅金屬化製程研究	張尚文; 張翼; E. Y. Chang
元智大學	2014-1-1	Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications	Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學	2014-1-1	Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications	Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學	2014-1-1	Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications	Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學	2014-07	Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect	Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
元智大學	2013-11	Effect of Indium Content on the Logic Performance of 80-nm Quantum-Well Field-Effect Transistors (QWFETs)	Heng-Tung Hsu; Chien-I Kuo; Che-Yang Chiang; E. Y. Chang
元智大學	2013-11	Effect of Indium Content on the Logic Performance of 80-nm Quantum-Well Field-Effect Transistors (QWFETs)	Heng-Tung Hsu; Chien-I Kuo; Che-Yang Chiang; E. Y. Chang
元智大學	2013-03	InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications	E. Y. Chang; C. I. Kuo; Heng-Tung Hsu; Che-Yang Chiang; Y. Miyamoto
元智大學	2012-11	Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz	F. Fatah; C. I. Kuo; H. T. Hsu; C. Y. Chiang; C. Y. Hsu; Y. Miyamoto; E. Y. Chang
元智大學	2012-06	Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching	C.I. Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H. Yu; H.C. Ho; E.Y. Chang; J.I. Chyi
元智大學	2012-04-26	BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations	C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi
元智大學	2012-04-26	BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations	C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi
元智大學	2010-12	Improvement in RF Performance of 40-nm InAs-Channel Based HEMTs Using Pt Gate Sinking With Two-Step Recess Processes Technology	C.I.Kuo; Heng-Tung Hsu; Chien-Ying Wu; E.Y.Chang; Chen-Yu Lin; Wee-Chin Lim
元智大學	2010-12	Improvement in RF Performance of 40-nm InAs-Channel Based HEMTs Using Pt Gate Sinking With Two-Step Recess Processes Technology	C.I.Kuo; Heng-Tung Hsu; Chien-Ying Wu; E.Y.Chang; Chen-Yu Lin; Wee-Chin Lim
元智大學	2010-08	Improvement on the noise performance of InAs-based HEMTs with gate sinking technology	Heng-Tung Hsu; C.I.Kuo; E.Y.Chang; F.-Y.Kuo
元智大學	2010-05	An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band LNA Applications	許恒通; C.-T. Wang; C.-I. Kuo; W.-C. Lim; L.-H. Hsu; Y. Miyamoto; E.Y. Chang; S.-P. Tsai; Y.-S. Chiu

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