English  |  正體中文  |  简体中文  |  Total items :0  
Visitors :  50685722    Online Users :  246
Project Commissioned by the Ministry of Education
Project Executed by National Taiwan University Library
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
About TAIR

Browse By

News

Copyright

Related Links

"e y chang"

Return to Browse by Author
Sorting by Title Sort by Date

Showing items 11-20 of 40  (4 Page(s) Totally)
<< < 1 2 3 4 > >>
View [10|25|50] records per page

Institution Date Title Author
元智大學 Feb-23 Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator 李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Feb-23 Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications 李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學 Dec-22 Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering 李清庭; C. Y. Yang; J. H. Wu; C. H. Chung; J. Y. You; T. C. Yu; C. J. Ma; D. Ueda; H. T. Hsu; E. Y. Chang
元智大學 Dec-22 InGaZnO Ferroelectric Thin-Film Transistor Using HfO2/Al2O3/AlN Hybrid Gate Dielectric Stack with Ultra-Large Memory Window 李清庭; C. Wang; C. N. Kuo; Y. C. Lin; H. T. Hsu; Y. F. Tsao; E. Y. Chang
元智大學 Dec-21 Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer 李清庭; J. J. Jian; H. Y. Lee; E. Y. Chang
元智大學 Aug-22 Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer 李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang
元智大學 Aug-21 AlGaN/GaN enhancement-mode MOSHEMTs utilizing hybrid gate-recessed structure and ferroelectric charge trapping/storage stacked LiNbO3/HfO2/Al2O3 structure 李清庭; H. Y. Lee; C. H. Lin; C. C. Wei; J. C. Yang; E. Y. Chang
元智大學 2014-7-1 Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
元智大學 2014-7-1 Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
國立交通大學 2014-12-12T02:51:18Z 砷化鎵及磷化銦異質接面雙載子電晶體之銅金屬化製程研究 張尚文; 張翼; E. Y. Chang

Showing items 11-20 of 40  (4 Page(s) Totally)
<< < 1 2 3 4 > >>
View [10|25|50] records per page