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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Showing items 21-40 of 40  (2 Page(s) Totally)
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Institution Date Title Author
元智大學 2014-1-1 Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學 2014-1-1 Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學 2014-1-1 Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications Chin-Te Wang; Li-Han Hsu; Wei-Cheng Wu; H. T. Hsu; E. Y. Chang; Yin-Chu Hu; Ching-Ting Lee; Szu-Ping Tsai
元智大學 2014-07 Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect Szu-Ping Tsai; H. T. Hsu; Che-Yang Chiang; Yong-Yi Tu; Chia-Hua Chang; Tin-En Hsieh; Huan-Chung Wang; Sz-Chien Liu; E.Y.Chang
元智大學 2013-11 Effect of Indium Content on the Logic Performance of 80-nm Quantum-Well Field-Effect Transistors (QWFETs) Heng-Tung Hsu; Chien-I Kuo; Che-Yang Chiang; E. Y. Chang
元智大學 2013-11 Effect of Indium Content on the Logic Performance of 80-nm Quantum-Well Field-Effect Transistors (QWFETs) Heng-Tung Hsu; Chien-I Kuo; Che-Yang Chiang; E. Y. Chang
元智大學 2013-03 InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications E. Y. Chang; C. I. Kuo; Heng-Tung Hsu; Che-Yang Chiang; Y. Miyamoto
元智大學 2012-11 Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz F. Fatah; C. I. Kuo; H. T. Hsu; C. Y. Chiang; C. Y. Hsu; Y. Miyamoto; E. Y. Chang
元智大學 2012-06 Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching C.I. Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H. Yu; H.C. Ho; E.Y. Chang; J.I. Chyi
元智大學 2012-04-26 BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi
元智大學 2012-04-26 BCl3 ICP Dry Etching on AlSb/InAs HEMTs for Low-Voltage Operations C.I.Kuo; Heng-Tung Hsu; C.Y. Hsu; C.H.Yu; H.C.Ho; G. W. Huang, , and ; E.Y. Chang; J.I. Chyi
元智大學 2010-12 Improvement in RF Performance of 40-nm InAs-Channel Based HEMTs Using Pt Gate Sinking With Two-Step Recess Processes Technology C.I.Kuo; Heng-Tung Hsu; Chien-Ying Wu; E.Y.Chang; Chen-Yu Lin; Wee-Chin Lim
元智大學 2010-12 Improvement in RF Performance of 40-nm InAs-Channel Based HEMTs Using Pt Gate Sinking With Two-Step Recess Processes Technology C.I.Kuo; Heng-Tung Hsu; Chien-Ying Wu; E.Y.Chang; Chen-Yu Lin; Wee-Chin Lim
元智大學 2010-08 Improvement on the noise performance of InAs-based HEMTs with gate sinking technology Heng-Tung Hsu; C.I.Kuo; E.Y.Chang; F.-Y.Kuo
元智大學 2010-05 An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band LNA Applications 許恒通; C.-T. Wang; C.-I. Kuo; W.-C. Lim; L.-H. Hsu; Y. Miyamoto; E.Y. Chang; S.-P. Tsai; Y.-S. Chiu
元智大學 2010-05 An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band LNA Applications 許恒通; C.-T. Wang; C.-I. Kuo; W.-C. Lim; L.-H. Hsu; Y. Miyamoto; E.Y. Chang; S.-P. Tsai; Y.-S. Chiu
元智大學 2007-02 Effect of gate sinking on the device performance of the InGaP/AlGaAs/ InGaAs enhancement-mode PHEMT 許恒通; L.H. Chu; E. Y. Chang; L. Chang; Y. H. Wu; S. H. Chen; T. L. Lee; Y. C. Lien; C. Y. Chang
元智大學 2007-02 SPDT GaAs switches with copper metallized interconnects 許恒通; Y. C. Wu; E. Y. Chang; Y. C. Lin; S. H. Chen; W. C. Wu; L. H. Chu; C. Y. Chang
國立臺灣海洋大學 2006-12 An immunological study of the Red Drum (Sciaenops ocellatus, Linnaeus)-Specific 80 kDa Protein in Taiwan Fishes E. Y. Chang;I.C. Liao
國立臺灣海洋大學 2006-12 An immunological study of the Red Drum (Sciaenops ocellatus, Linnaeus)-Specific 80 kDa Protein in Taiwan Fishes E. Y. Chang;I C. Liao

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