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"edirisooriya m"
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國立成功大學 |
2013-09-30 |
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
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Wang, C. H.; Wang, S. W.; Doornbos, G.; Astromskas, G.; Bhuwalka, K.; Contreras-Guerrero, R.; Edirisooriya, M.; Rojas-Ramirez, J. S.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Hsieh, C. H.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L-E; Droopad, R.; Passlack, M.; Diaz, C. H. |
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