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Institution Date Title Author
國立交通大學 2014-12-16T06:14:37Z Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technology Chang; Edward Y.; Lee; Huang-Ming
國立交通大學 2014-12-16T06:14:31Z Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer Chang; Edward Y.; Luo; Guangli; Yang; Tsung Hsi; Chung Yen

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