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機構	日期	題名	作者
元智大學	2010-12	Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate	Chien-I Kuo; Wee-Chin Lim; Heng-Tung Hsu; Chin-Te Wang; Li-Han Hsu; Faiz Aizad; Guo-Wei Huang; Yasuyuki Miyamoto; Edward Yi Chang
元智大學	2010-12	Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate	Chien-I Kuo; Wee-Chin Lim; Heng-Tung Hsu; Chin-Te Wang; Li-Han Hsu; Faiz Aizad; Guo-Wei Huang; Yasuyuki Miyamoto; Edward Yi Chang
元智大學	2010-09	Evaluation of InAs-based HEMTs for Future Energy-Efficient and Logic Applications	Chien-I Kuo; Heng-Tung Hsu; Chin-Te Wang; Edward Yi Chang
元智大學	2010-09	Evaluation of InAs-based HEMTs for Future Energy-Efficient and Logic Applications	Chien-I Kuo; Heng-Tung Hsu; Chin-Te Wang; Edward Yi Chang
元智大學	2010-07	RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1−xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications	許恒通; Chien-I Kuo; Yu-Lin Chen; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Wen-Chung Tsern; Kartik Chandra Sahoo
元智大學	2010-05	Investigation Logic Performances of 80-nm HEMTs for InxGa1-xAs	許恒通; Faiz Aizad; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Guo-Wei Huang; Yu-Lin Chen; Yu-Sheng Chiu
元智大學	2010-05	Investigation Logic Performances of 80-nm HEMTs for InxGa1-xAs	許恒通; Faiz Aizad; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Guo-Wei Huang; Yu-Lin Chen; Yu-Sheng Chiu
元智大學	2010-04	An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications	許恒通; Yun-Chi Wu; Yueh-Chin Lin; Edward Yi Chang; C. T. Lee; Chi-Chung Kei; Chia-Ta Chang
元智大學	2010-02	30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs	許恒通; Chia-Ta Chang; Edward Yi Chang; Chien-I Kuo; Jui-Chien Huang; C. Y. Lu; Y. Miyamoto
國立臺灣海洋大學	2010-02	Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation	Jin-Yu Shiu; Chung-Yu Lu; Ting-Yi Su; R. T. Huang; Herbert Zirath; Niklas Rorsman; Edward Yi Chang
元智大學	2010-01	DC and RF performance improvement of 70nm quantum well field effect transistor by narrowing source - drain spacing technology	許恒通; Chien-I Kuo; Edward Yi Chang; Yasuyuki Miyamoto; Chien-Ying Wu; Yu-Lin Chen; Yu-Lin Hsiao
元智大學	2010-01	Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications	許恒通; Jui-Chien Huang; Edward-Yi Chang; Chung-Yu Lu; Chia-Ta Chang; Fang-Yao Kuo; Yi-Chung Chen; Ting-Hung Hsu
元智大學	2010-01	Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications	許恒通; Jui-Chien Huang; Edward-Yi Chang; Chung-Yu Lu; Chia-Ta Chang; Fang-Yao Kuo; Yi-Chung Chen; Ting-Hung Hsu
元智大學	2009-12	A Novel Metamorphic High Electron Mobility Transistors with (InxGa1-xAs)m/(InAs)n Superlattice Channel Layer for Millimeter-Wave Applications	許恒通; Chien-I Kuo; Jung-Chi Lu; Edward Yi Chang; Chien-Ying Wu; Yasuyuki Miyamoto; Wen-Chung Tsern
元智大學	2009-12	A Novel Metamorphic High Electron Mobility Transistors with (InxGa1-xAs)m/(InAs)n Superlattice Channel Layer for Millimeter-Wave Applications	許恒通; Chien-I Kuo; Jung-Chi Lu; Edward Yi Chang; Chien-Ying Wu; Yasuyuki Miyamoto; Wen-Chung Tsern
元智大學	2009-10	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-10	InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric	許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學	2009-05	A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT	許恒通; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas
元智大學	2009-05	Linearity Characteristics of Field Plated AlGaN/GaN HEMTs for Microwave Applications	許恒通; Jui-Chien Huang; Chung-Yu Lu; Chia-Ta Chang; Edward Yi Chang
元智大學	2009-05	A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT	許恒通; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas
元智大學	2009-05	Linearity Characteristics of Field Plated AlGaN/GaN HEMTs for Microwave Applications	許恒通; Jui-Chien Huang; Chung-Yu Lu; Chia-Ta Chang; Edward Yi Chang
元智大學	2009-04	InAs-Channel HEMTs for Ultra-Low-Power LNA Applications	許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto

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