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Showing items 81-90 of 122  (13 Page(s) Totally)
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Institution Date Title Author
元智大學 2009-05 A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT 許恒通; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas
元智大學 2009-05 Linearity Characteristics of Field Plated AlGaN/GaN HEMTs for Microwave Applications 許恒通; Jui-Chien Huang; Chung-Yu Lu; Chia-Ta Chang; Edward Yi Chang
元智大學 2009-05 A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT 許恒通; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas
元智大學 2009-05 Linearity Characteristics of Field Plated AlGaN/GaN HEMTs for Microwave Applications 許恒通; Jui-Chien Huang; Chung-Yu Lu; Chia-Ta Chang; Edward Yi Chang
元智大學 2009-04 InAs-Channel HEMTs for Ultra-Low-Power LNA Applications 許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto
元智大學 2009-04 InAs-Channel HEMTs for Ultra-Low-Power LNA Applications 許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto
元智大學 2009-03 Evaluation of InAs QWFET for Low Power Logic Applications 許恒通; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto; Chia-Ta Chang; Chien-Ying Wu
元智大學 2009-03 Evaluation of InAs QWFET for Low Power Logic Applications 許恒通; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto; Chia-Ta Chang; Chien-Ying Wu
元智大學 2008-12 On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology 許恒通; Chien-I Kuo; Edward Yi Chang
元智大學 2008-12 Evaluation of RF and Logic Performance for 40 nm InAs/InGaAs Composite Channel HEMTs for high-speed and low-voltage applications 許恒通; Chien-Ying Wu; Chien-I Kuo; Edward Yi Chang

Showing items 81-90 of 122  (13 Page(s) Totally)
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