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Institution Date Title Author
國立臺灣海洋大學 2009-04 Room-temperature mechanical properties of LAST (Pb–Sb–Ag–Te) thermoelectric materials as a function of cooling rate during ingot casting F. Ren; E. D. Case; B. D. Hall; J. E. Ni; E. J. Timm; C.-I Wu; J. J. D’Angelo; T. P. Hogan; E. Lara-Curizio
國立臺灣海洋大學 2007-09 Characterization of dry milled powders of LAST (lead–antimony–silver–tellurium) thermoelectric material A. L. Pilchak; F. Ren; E. D. Case; E. J. Timm; H. J. Schock; C.-I Wu; T. P. Hogan
南台科技大學 2005 Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors 李明倫; C. J. Kao; M. C. Chen; C.J. Tun; G. C. Chi; J. K. Sheu; W. C. Lai; M. L. Lee; F.Ren; S.J.Pearton
國立中山大學 1998 Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen

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