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Institution Date Title Author
臺大學術典藏 2018-09-10T06:34:43Z Comparative study of InAs quantum dots with different InGaAs capping methods C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:58Z InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T05:26:31Z InAs/InGaAs/GaAs coupled quantum-dot laser C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:49Z Growth of InAs quantum dots with light emission at 1.3 m F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:48Z Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:48Z Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:47Z Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers M.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:46Z Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy C. M. Lai,; F. Y. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:35:09Z InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:35:07Z Temperature dependence of photoreflectance in InAs/GaAs quantum dots C. M. Lai,; F. Y. Chang,; C. W. Chang,; C. H. Kao,; H. H. Lin,; G. J. Jan,; J. Lee,; HAO-HSIUNG LIN

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