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Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
| 臺大學術典藏 |
2020-08-23T15:39:10Z |
Analysis of GeOI FinFET 6T SRAM cells with variation-tolerant WLUD read-assist and TVC write-assist
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Fan, M.-L.; Su, P.; Chuang, C.-T.; 胡壁合; Hu, V.P.-H. |
| 臺大學術典藏 |
2020-08-23T15:27:51Z |
A comparative analysis of tunneling FET circuit switching characteristics and SRAM stability and performance
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Chen, Y.-N.; Fan, M.-L.; Hu, P.-H.; Tsai, M.-F.; Pao, C.-H.; Su, P.; Chuang, C.-T. |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
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