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"fan ming long"
Showing items 51-59 of 59 (6 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:21:25Z |
Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:20Z |
Impacts of Single Trap Induced Random Telegraph Noise on FinFET Devices and SRAM Cell Stability
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Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:19Z |
Comprehensive Analysis of UTB GeOI Logic Circuits and 6T SRAM Cells considering Variability and Temperature Sensitivity
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Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:19:54Z |
Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAM
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:12:04Z |
FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics
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Hu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:12:03Z |
Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based Approach
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Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:08:46Z |
Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells-An Assessment Based on Analytical Solutions of Poisson's Equation
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:07:33Z |
Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach
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Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin |
| 國立交通大學 |
2014-12-08T15:06:44Z |
Investigation of Cell Stability and Write Ability of FinFET Subthreshold SRAM Using Analytical SNM Model
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Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
Showing items 51-59 of 59 (6 Page(s) Totally)
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