| 國立交通大學 |
2019-04-03T06:42:08Z |
Evaluation of Monolithic 3-D Logic Circuits and 6T SRAMs With InGaAs-n/Ge-p Ultra-Thin-Body MOSFETs
|
Yu, Kuan-Chin; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2019-04-02T05:59:08Z |
Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2019-04-02T05:58:12Z |
Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2019-04-02T05:58:09Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2018-08-21T05:56:55Z |
Ultra-Low Voltage Mixed TFET-MOSFET 8T SRAM Cell
|
Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:55:34Z |
Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET
|
Hsu, Chih-Wei; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin |
| 國立交通大學 |
2017-04-21T06:49:57Z |
Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and Logic Circuits
|
Chen, Chien-Ju; Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:49:05Z |
Evaluation of TFET and FinFET Devices and 32-Bit CLA Circuits Considering Work Function Variation and Line-Edge Roughness
|
Chen, Chien-Ju; Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:49:02Z |
Impacts of NBTI and PBTI on Ultra-Thin-Body GeOI 6T SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2016-03-28T00:04:24Z |
Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
|
Yu, Chang-Hung; Fan, Ming-Long; Yu, Kuan-Chin; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-12-02T03:00:54Z |
Stability/Performance Assessment of Monolithic 3D 6T/ST SRAM Cells Considering Transistor-Level Interlayer Coupling
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T11:21:14Z |
Evaluation of Stability, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits
|
Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T11:20:55Z |
Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices
|
Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:31:27Z |
Evaluation of Read-and Write-Assist Circuits for GeOI FinFET 6T SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:31:16Z |
Investigation and Optimization of Monolithic 3D Logic Circuits and SRAM Cells Considering Interlayer Coupling
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:31:11Z |
Evaluation of Transient Voltage Collapse Write-Assist for GeOI and SOI FinFET SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:29:06Z |
Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation
|
Lee, Ko-Chun; Fan, Ming-Long; Su, Pin |
| 國立交通大學 |
2015-07-21T08:29:05Z |
Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Hsu, Chih-Wei; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:28:07Z |
Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-16T06:15:18Z |
SCHMITT TRIGGER-BASED FINFET SRAM CELL
|
Chuang Ching-Te; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-16T06:15:00Z |
INDEPENDENTY-CONTROLLED-GATE SRAM
|
CHUANG Ching-Te; Chen Yin-Nien; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-16T06:14:14Z |
Schmitt trigger-based finFET SRAM cell
|
Chuang Ching-Te; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-16T06:13:52Z |
Independently-controlled-gate SRAM
|
Chuang Ching-Te; Chen Yin-Nien; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-12T02:45:23Z |
鰭狀、穿隧場效電晶體和異質通道三維積體超薄層元件於超低功耗靜態隨機存取記憶體和邏輯電路之設計與分析
|
范銘隆; Fan, Ming-Long; 蘇彬; Su, Pin |
| 國立交通大學 |
2014-12-08T15:38:27Z |
Evaluation of Static Noise Margin and Performance of 6T FinFET SRAM Cells with Asymmetric Gate to Source/Drain Underlap Devices
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
