| 國立交通大學 |
2017-04-21T06:55:34Z |
Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET
|
Hsu, Chih-Wei; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin |
| 國立交通大學 |
2017-04-21T06:49:57Z |
Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and Logic Circuits
|
Chen, Chien-Ju; Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:49:05Z |
Evaluation of TFET and FinFET Devices and 32-Bit CLA Circuits Considering Work Function Variation and Line-Edge Roughness
|
Chen, Chien-Ju; Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:49:02Z |
Impacts of NBTI and PBTI on Ultra-Thin-Body GeOI 6T SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2016-03-28T00:04:24Z |
Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
|
Yu, Chang-Hung; Fan, Ming-Long; Yu, Kuan-Chin; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-12-02T03:00:54Z |
Stability/Performance Assessment of Monolithic 3D 6T/ST SRAM Cells Considering Transistor-Level Interlayer Coupling
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T11:21:14Z |
Evaluation of Stability, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits
|
Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T11:20:55Z |
Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices
|
Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:31:27Z |
Evaluation of Read-and Write-Assist Circuits for GeOI FinFET 6T SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:31:16Z |
Investigation and Optimization of Monolithic 3D Logic Circuits and SRAM Cells Considering Interlayer Coupling
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:31:11Z |
Evaluation of Transient Voltage Collapse Write-Assist for GeOI and SOI FinFET SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:29:06Z |
Investigation and comparison of analog figures-of-merit for TFET and FinFET considering work-function variation
|
Lee, Ko-Chun; Fan, Ming-Long; Su, Pin |
| 國立交通大學 |
2015-07-21T08:29:05Z |
Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Hsu, Chih-Wei; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2015-07-21T08:28:07Z |
Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-16T06:15:18Z |
SCHMITT TRIGGER-BASED FINFET SRAM CELL
|
Chuang Ching-Te; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-16T06:15:00Z |
INDEPENDENTY-CONTROLLED-GATE SRAM
|
CHUANG Ching-Te; Chen Yin-Nien; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-16T06:14:14Z |
Schmitt trigger-based finFET SRAM cell
|
Chuang Ching-Te; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-16T06:13:52Z |
Independently-controlled-gate SRAM
|
Chuang Ching-Te; Chen Yin-Nien; Hsieh Chien-Yu; Fan Ming-Long; Hu Pi-Ho; Su Pin |
| 國立交通大學 |
2014-12-12T02:45:23Z |
鰭狀、穿隧場效電晶體和異質通道三維積體超薄層元件於超低功耗靜態隨機存取記憶體和邏輯電路之設計與分析
|
范銘隆; Fan, Ming-Long; 蘇彬; Su, Pin |
| 國立交通大學 |
2014-12-08T15:38:27Z |
Evaluation of Static Noise Margin and Performance of 6T FinFET SRAM Cells with Asymmetric Gate to Source/Drain Underlap Devices
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:38:26Z |
Independently-Controlled-Gate FinFET Schmitt Trigger Sub-threshold SRAMs
|
Hsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:36:16Z |
Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:36:11Z |
FinFET SRAM Cell Optimization Considering Temporal Variability due to NBTI/PBTI and Surface Orientation
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:35:52Z |
Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits
|
Fan, Ming-Long; Yang, Shao-Yu; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:35:18Z |
Impacts of Single Trap Induced Random Telegraph Noise on Si and Ge Nanowire FETs, 6T SRAM Cells and Logic Circuits
|
Yang, Shao-Yu; Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Analysis of Germanium FinFET Logic Circuits and SRAMs with Asymmetric Gate to Source/Drain Underlap Devices
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Source/Drain Series Resistance Induced Feedback Effect on Drain Current Mismatch and Its Implication
|
Kuo, Jack J. -Y.; Fan, Ming-Long; Lee, Wei; Su, Pin |
| 國立交通大學 |
2014-12-08T15:32:43Z |
Design and Optimization of 6T SRAM using Vertically Stacked Nanowire MOSFETs
|
Tsai, Ming-Fu; Fan, Ming-Long; Pao, Chia-Hao; Chen, Yin-Nien; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:20Z |
Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:12Z |
Investigation of Single-Trap-Induced Random Telegraph Noise for Tunnel FET Based Devices, 8T SRAM Cell, and Sense Amplifiers
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:32:12Z |
Device Design and Analysis of Logic Circuits and SRAMs for Germanium FinFETs on SOI and Bulk Substrates
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:31:13Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:35Z |
Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nein; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:30Z |
Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Design and Analysis of Robust Tunneling FET SRAM
|
Chen, Yin-Nien; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach
|
Chou, Shao-Heng; Fan, Ming-Long; Su, Pin |
| 國立交通大學 |
2014-12-08T15:30:04Z |
Variation Tolerant CLSAs for Nanoscale Bulk-CMOS and FinFET SRAM
|
Tsai, Ming-Fu; Tsai, Jen-Huan; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:30:03Z |
A Comprehensive Comparative Analysis of FinFET and Trigate Device, SRAM and Logic Circuits
|
Pao, Chia-Hao; Fan, Ming-Long; Tsai, Ming-Fu; Chen, Yin-Nien; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:29:40Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:28:05Z |
Impacts of Random Telegraph Noise on FinFET Devices, 6T SRAM cell, and Logic Circuits
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:25:21Z |
Investigation of Static Noise Margin of FinFET SRAM Cells in Sub-threshold Region
|
Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:24:25Z |
Investigation of Static Noise Margin of Ultra-Thin-Body SOI SRAM Cells in Subthreshold Region using Analytical Solution of Poisson's Equation
|
Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:48Z |
"Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits"
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:23:33Z |
Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs
|
Hsieh, Chien-Yu; Fan, Ming-Long; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:25Z |
Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:20Z |
Impacts of Single Trap Induced Random Telegraph Noise on FinFET Devices and SRAM Cell Stability
|
Fan, Ming-Long; Hu, Vita Pi-Ho; Chen, Yin-Nien; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:21:19Z |
Comprehensive Analysis of UTB GeOI Logic Circuits and 6T SRAM Cells considering Variability and Temperature Sensitivity
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:19:54Z |
Design and Analysis of Ultra-Thin-Body SOI Based Subthreshold SRAM
|
Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:12:04Z |
FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics
|
Hu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
