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机构 日期 题名 作者
國立交通大學 2015-12-02T02:59:22Z High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector Fan, Yang-Shun; Liu, Po-Tsun; Chen, Chun-Ching; Chang, Che-Chia
國立交通大學 2015-07-21T11:20:59Z Improvement of Resistive Switching Uniformity for Al-Zn-Sn-O-Based Memory Device With Inserting HfO2 Layer Liu, Po-Tsun; Fan, Yang-Shun; Chen, Chun-Ching
國立交通大學 2014-12-16T06:14:50Z FLEXIBLE NON-VOLATILE MEMORY LIU Po-Tsun; FAN Yang-Shun
國立交通大學 2014-12-16T06:14:48Z RESISTIVE RANDOM ACCESS MEMORY DEVICE AND OPERATING METHOD THEREOF LIU Po-Tsun; HSU Ching-Hui; FAN Yang-Shun
國立交通大學 2014-12-16T06:13:53Z Flexible non-volatile memory Liu Po-Tsun; Fan Yang-Shun
國立交通大學 2014-12-16T06:13:48Z Resistive random access memory device and operating method thereof Liu Po-Tsun; Hsu Ching-Hui; Fan Yang-Shun
國立交通大學 2014-12-08T15:36:51Z InZnSnO-Based Electronic Devices for Flat Panel Display Applications Liu, Po-Tsun; Fuh, Chur-Shyang; Fan, Yang-Shun; Sze, S. M.
國立交通大學 2014-12-08T15:36:14Z Transparent Amorphous Oxide Semiconductors for System on Panel Applications Liu, Po-Tsun; Chu, Li-Wei; Teng, Li-Feng; Fan, Yang-Shun; Fuh, Chur-Shyang
國立交通大學 2014-12-08T15:35:19Z Characteristic Evolution from Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film Fan, Yang-Shun; Liu, Po-Tsun
國立交通大學 2014-12-08T15:33:23Z Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability Fan, Yang-Shun; Liu, Po-Tsun; Hsu, Ching-Hui
國立交通大學 2014-12-08T15:29:30Z Multilevel resistive switching memory with amorphous InGaZnO-based thin film Hsu, Ching-Hui; Fan, Yang-Shun; Liu, Po-Tsun
國立交通大學 2014-12-08T15:24:05Z Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications Fan, Yang-Shun; Liu, Po-Tsun; Teng, Li-Feng; Hsu, Ching-Hui

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