|
"fang yean kuen"的相關文件
顯示項目 106-155 / 182 (共4頁)
<< < 1 2 3 4 > >>
每頁顯示[10|25|50]項目
| 國立成功大學 |
2004-03 |
Characterization and modeling of SOI varactors at various temperatures
|
Chen, Kun-Ming; Huang, Guo-Wei; Wang, Sheng-Chun; Yeh, Wen-Kuan; Fang, Yean-Kuen; Yang, Fu-Liang |
| 國立成功大學 |
2004-03 |
Design and fabrication of deep submicron CMOS technology compatible suspended high-Q spiral inductors
|
Hsieh, Ming-Chun; Fang, Yean-Kuen; Chen, Chin-Hsing; Chen, Shuo-Mao; Yeh, Wen-Kuan |
| 國立成功大學 |
2004-02 |
Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus
|
Lin, C. S.; Fang, Yean-Kuen; Chen, S. F.; Lin, C. Y.; Hsieh, M. C.; Wang, C. C.; Huang, H. K.; Wu, C. L.; Chang, C. S. |
| 國立成功大學 |
2004-01 |
Light guide for pixel crosstalk improvement in deep submicron CMOS image sensor
|
Hsu, Tzu-Hsuan; Fang, Yean-Kuen; Lin, C. Y.; Chen, S. F.; Lin, C. S.; Yaung, Dun-Nian; Wuu, Shou-Gwo; Chien, H. C.; Tseng, C. H.; Lin, J. S.; Wang, C. S. |
| 國立成功大學 |
2004 |
Magneto electronic properties of a graphite sheet
|
Chang, Cheng-Peng; Lu, Chi-Lang; Shyu, Feng-Lin.; Chen, Rong-Bin; Fang, Yean-Kuen; Lin, Min-Fa |
| 國立成功大學 |
2003-10-30 |
Low temperature grown poly-SiGe thin film by Au metal-induced lateral crystallisation (MILIC) with fast MILC growth rate
|
Chen, S. F.; Fang, Yean-Kuen; Wang, W. D.; Lin, C. Y.; Lin, C. S. |
| 國立成功大學 |
2003-10-16 |
Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift
|
Yang, Chih-Wei; Fang, Yean-Kuen; Lin, C. S.; Tsair, Y. S.; Chen, Shi-Ming; Wang, W. D.; Wang, M. F.; Cheng, Juing-Yi; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-09-18 |
Enhancing circuit design flexibility with argon implanted polysilicon resistor
|
Lin, C. S.; Fang, Yean-Kuen; Chen, S. F.; Lin, C. Y.; Hsieh, M. C.; Hsu, Y. L.; HSu, Szu-Lin |
| 國立成功大學 |
2003-09 |
The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications
|
Chang, Wen-Rong; Fang, Yean-Kuen; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Lin, Chun-Yu; Chen, Shih-Fang |
| 國立成功大學 |
2003-07-14 |
Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric
|
Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Chen, S. F.; Lin, C. Y.; Lin, C. S.; Wang, M. F.; Lin, Y. M.; Hou, T. H.; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-07-08 |
Method of growing single crystal gallium nitride on silicon substrate
|
Fang, Yean-Kuen; Chang, Wen-Rong; Ting, Shyh-Fann; Kuan, Hon; Chang, Cheng-Nan |
| 國立成功大學 |
2003-06 |
Dramatic improving luminous efficiency of organic light emitting diodes under low driving current using nitrogen doped hole transporter
|
Lee, W. J.; Fang, Yean-Kuen; Chiang, Hsin-Che; Ting, S. F.; Chen, S. F.; Chang, W. R.; Lin, C. Y.; Lin, T. Y.; Ho, J. J. |
| 國立成功大學 |
2003-05 |
Using diode-stacked NMOS as high voltage tolerant ESD protection device for analog applications in deep submicron CMOS technologies
|
Chen, C. H.; Fang, Yean-Kuen; Wang, Wen-De; Tsai, Chien-Chun; Tu, Shen; Chen, MarkK.L.; Chang, Mi-Chang |
| 國立成功大學 |
2003-05 |
Improving turn on voltage and driving voltage of organic electroluminescent devices with nitrogen doped electron transporter
|
Lee, W. J.; Fang, Yean-Kuen; Chiang, Hsin-Che; Ting, S. F.; Chen, S. F.; Chang, W. R.; Lin, C. Y.; Lin, T. Y.; Wang, W. D.; Hou, S. C.; Ho, Jyh-Jier |
| 國立成功大學 |
2003-04-17 |
Crystal SiGeC far infrared sensor with temperature isolation improvement structure
|
Hsieh, Ming-Chun; Fang, Yean-Kuen; Wu, Pei-Ming; Wang, Wen-De |
| 國立成功大學 |
2003-04-17 |
HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application
|
Yang, Chih-Wei; Fang, Yean-Kuen; Chen, S. F.; Wang, M. F.; Hou, T. H.; Lin, Y. M.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-04 |
High performance 12 GHz enhancement-mode pseudomorphic HEMT prepared by He plus reactive ion etching
|
Lin, C. S.; Fang, Yean-Kuen; Ting, S. F.; Wang, C. C.; Huang, H. K.; Wu, C. L.; Chang, C. S. |
| 國立成功大學 |
2003-04 |
Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide
|
Yang, Chih-Wei; Fang, Yean-Kuen; Ting, S. F.; Chen, C. H.; Wang, W. D.; Lin, T. Y.; Wang, M. F.; Yu, M. C.; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, C. H.; Liang, M. S. |
| 國立成功大學 |
2003-04 |
Hot-carrier-induced degradation on 0.1 mu m partially depleted silicon-on-insulator complementary metal-oxide-semiconductor field-effect-transistor
|
Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang |
| 國立成功大學 |
2003-03-06 |
Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation
|
Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Shih-Fang; Lin, Chun-Yu; Wang, Ming-Fang; Lin, Yeou-Ming; Hou, Tuo-Hung; Yao, Liang-Gi; Chen, Shih-Chang; Liang, Mong-Song |
| 國立成功大學 |
2003-02 |
A novel etching technology with reactive ion etching system for GaAs via-hole etching applications
|
Lin, C. S.; Fang, Yean-Kuen; Ting, S. F.; Wu, C. L.; Chang, C. S. |
| 國立成功大學 |
2003-01 |
Improvement of short-channel characteristics of a 0.1-mu m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment
|
Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Wang, W. D.; Ting, S. F.; Cheng, J. Y.; Wang, M. F.; Chen, C. L.; Yao, Liang-Gi; Lee, T. L.; Chen, S. C.; Yu, C. H.; Liang, M. S. |
| 國立成功大學 |
2002-12 |
Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 mu m CMOSFET with 2-nm thin gate oxide
|
Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Chen, Mao-Chieh; Yang, Fu-Liang |
| 國立成功大學 |
2002-12 |
Optimizing indium tin oxide thin films with bipolar d.c.-pulsed magnetron sputtering for electrochromic device applications
|
Lee, William J.; Fang, Yean-Kuen; Ho, Jyh-Jier; Chen, Chin-Ying; Chen, Shin-Fu; Tsai, Rung-Ywan; Huang, Daoyang; Ho, Fang C. |
| 國立成功大學 |
2002-11 |
Modeling of abnormal capacitance-voltage characteristics observed in MOS transistor with ultra-thin gate oxide
|
Hsu, Yung-Lung; Fang, Yean-Kuen; Tsao, Feng-Cherng; Kuo, Fu-Jung; Ho, Yens |
| 國立成功大學 |
2002-11 |
Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source
|
Hsieh, Wen-Tse; Fang, Yean-Kuen; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Lee, William J.; Wang, H. P. |
| 國立成功大學 |
2002-10 |
Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Hsieh, Wen-Tse; Tsair, Yong-Shiuan; Chang, Chang-Nan; Lin, Chun-Sheng; Hsieh, Ming-Chun; Chiang, Hsin-Che; Ho, Jyh-Jier |
| 國立成功大學 |
2002-09-26 |
Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with AI(2)O(3) capping layer
|
Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Chien-Hao; Wang, Wen-De; Lin, Tin-Yu; Wang, Ming-Fang; Hou, Tuo-Hung; Cheng, Juing-Yi; Yao, Liang-Gi; Chen, Shyh-Chang; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-07 |
Temperature dependence of hot-carrier-induced degradation in 0.1 mu m SOI nMOSFETs with thin oxide
|
Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang |
| 國立成功大學 |
2002-05-01 |
New observations on hot-carrier degradation in 0.1 mu m silicon-on-insulator n-type metal oxide semiconductor field effect transistors
|
Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang |
| 國立成功大學 |
2002-05 |
Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15
|
Chung, Ming-Shaw; Wang, Ming-Jun; Lin, Wen-Tai; Chang, Tao-Chih; Fang, Yean-Kuen |
| 國立成功大學 |
2002-05 |
Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation
|
Chen, Chien-Hao; Fang, Yean-Kuen; Ting, Shyh-Fann; Hsieh, Wen-Tse; Yang, Chih-Wei; Hsu, Tzu-Hsuan; Yu, Mo-Chiun; Lee, Tze-Liang; Chen, Shih-Chang; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system
|
Lee, William J.; Fang, Yean-Kuen; Ho, Jyh-Jier; Chen, Chin-Ying; Chiou, L. H.; Wang, Shui-Jinn; Dai, F; Hsieh, T; Tsai, Rung-Ywan; Huang, Daoyang; Ho, Fang C. |
| 國立成功大學 |
2002-04 |
The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 mu m and beyond CMOS technology application
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Hou, Tuo-Hong; Wang, Ming-Fang; Yu, Mo-Chiun; Lin, Chuing-Liang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Cu3Ge Schottky contacts on n-GaN
|
Hsin, Hui-Ching; Lin, Wen-Tai; Gong, J. R.; Fang, Yean-Kuen |
| 國立成功大學 |
2002-03 |
A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Hsieh, Wen-Tse; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Lin, Chun-Sheng; Hsieh, Ming-Chun; Chiang, Hsin-Che; Ho, Jyh-Jier |
| 國立成功大學 |
2002-02 |
Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications
|
Lee, William J.; Fang, Yean-Kuen; Ho, Jyh-Jier; Chen, Chin-Ying; Tsai, Rung-Ywan; Huang, Dao-Yang; Ho, Fang C.; Chou, H. W.; Chen, C. C. |
| 國立成功大學 |
2001-12 |
To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment
|
Chen, Chein-Hao; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Hou, Tuo-Hong; Yu, Mo-Chiun; Chen, Shih-Chang; Jang, Syun-Ming; Yu, D. C. H.; Liang, Mong-Song |
| 國立成功大學 |
2001-11 |
A deep submicron CMOS process compatible suspending high-Q inductor
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tang, C. S. |
| 國立成功大學 |
2001-11 |
Nitrogen implanted polysilicon resistor for high-voltage CMOS technology application
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Wang, Ta-Wei; Hsu, Yung-Lung; Hsu, Shun-Liang |
| 國立成功大學 |
2001-11 |
Cubic single-crystalline Si1-x-yCxNy films with mirror face prepared by RTCVD
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Hsieh, Wen-Tse; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Lin, Chun-Sheng; Hsieh, Ming-Chun; Chiang, Hsin-Che; Ho, Jyh-Jier |
| 國立成功大學 |
2001-10-25 |
Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides
|
Chen, Chung-Hui; Fang, Yean-Kuen; Hsieh, Wen-Tse; Ting, Shyh-Fann; Yu, Mo-Chiun; Wang, Ming-Fang; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-08 |
Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Yu, Mo-Chiun; Hou, Tuo-Hung; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-07 |
The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 mu m CMOS technology and beyond
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chung-Hui; Yang, Chih-Wei; Hsieh, Wen-Tse; Ho, Jyh-Jier; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, S; Shih, R |
| 國立成功大學 |
2001-06-07 |
He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chien-Hao; Yang, Chih-Wei; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, Sun-Way; Shih, R. |
| 國立成功大學 |
2001-06 |
High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Lin, Yu-Min; Yu, Mo-Chiun; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-04 |
Using porous silicon as semi-insulating substrate for beta-SiC high temperature optical-sensing devices
|
Hsieh, Wen-Tse; Fang, Yean-Kuen; Wu, Kuen-Hsien; Lee, William J.; Ho, Jyh-Jier; Ho, Chi-Wei |
| 國立成功大學 |
2001-03 |
Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
顯示項目 106-155 / 182 (共4頁)
<< < 1 2 3 4 > >>
每頁顯示[10|25|50]項目
|
