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"fang yean kuen"的相關文件
顯示項目 116-140 / 182 (共8頁) << < 1 2 3 4 5 6 7 8 > >> 每頁顯示[10|25|50]項目
國立成功大學 |
2003-07-08 |
Method of growing single crystal gallium nitride on silicon substrate
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Fang, Yean-Kuen; Chang, Wen-Rong; Ting, Shyh-Fann; Kuan, Hon; Chang, Cheng-Nan |
國立成功大學 |
2003-06 |
Dramatic improving luminous efficiency of organic light emitting diodes under low driving current using nitrogen doped hole transporter
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Lee, W. J.; Fang, Yean-Kuen; Chiang, Hsin-Che; Ting, S. F.; Chen, S. F.; Chang, W. R.; Lin, C. Y.; Lin, T. Y.; Ho, J. J. |
國立成功大學 |
2003-05 |
Using diode-stacked NMOS as high voltage tolerant ESD protection device for analog applications in deep submicron CMOS technologies
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Chen, C. H.; Fang, Yean-Kuen; Wang, Wen-De; Tsai, Chien-Chun; Tu, Shen; Chen, MarkK.L.; Chang, Mi-Chang |
國立成功大學 |
2003-05 |
Improving turn on voltage and driving voltage of organic electroluminescent devices with nitrogen doped electron transporter
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Lee, W. J.; Fang, Yean-Kuen; Chiang, Hsin-Che; Ting, S. F.; Chen, S. F.; Chang, W. R.; Lin, C. Y.; Lin, T. Y.; Wang, W. D.; Hou, S. C.; Ho, Jyh-Jier |
國立成功大學 |
2003-04-17 |
Crystal SiGeC far infrared sensor with temperature isolation improvement structure
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Hsieh, Ming-Chun; Fang, Yean-Kuen; Wu, Pei-Ming; Wang, Wen-De |
國立成功大學 |
2003-04-17 |
HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, S. F.; Wang, M. F.; Hou, T. H.; Lin, Y. M.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
國立成功大學 |
2003-04 |
High performance 12 GHz enhancement-mode pseudomorphic HEMT prepared by He plus reactive ion etching
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Lin, C. S.; Fang, Yean-Kuen; Ting, S. F.; Wang, C. C.; Huang, H. K.; Wu, C. L.; Chang, C. S. |
國立成功大學 |
2003-04 |
Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide
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Yang, Chih-Wei; Fang, Yean-Kuen; Ting, S. F.; Chen, C. H.; Wang, W. D.; Lin, T. Y.; Wang, M. F.; Yu, M. C.; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, C. H.; Liang, M. S. |
國立成功大學 |
2003-04 |
Hot-carrier-induced degradation on 0.1 mu m partially depleted silicon-on-insulator complementary metal-oxide-semiconductor field-effect-transistor
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Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang |
國立成功大學 |
2003-03-06 |
Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Shih-Fang; Lin, Chun-Yu; Wang, Ming-Fang; Lin, Yeou-Ming; Hou, Tuo-Hung; Yao, Liang-Gi; Chen, Shih-Chang; Liang, Mong-Song |
國立成功大學 |
2003-02 |
A novel etching technology with reactive ion etching system for GaAs via-hole etching applications
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Lin, C. S.; Fang, Yean-Kuen; Ting, S. F.; Wu, C. L.; Chang, C. S. |
國立成功大學 |
2003-01 |
Improvement of short-channel characteristics of a 0.1-mu m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Wang, W. D.; Ting, S. F.; Cheng, J. Y.; Wang, M. F.; Chen, C. L.; Yao, Liang-Gi; Lee, T. L.; Chen, S. C.; Yu, C. H.; Liang, M. S. |
國立成功大學 |
2002-12 |
Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 mu m CMOSFET with 2-nm thin gate oxide
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Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Chen, Mao-Chieh; Yang, Fu-Liang |
國立成功大學 |
2002-12 |
Optimizing indium tin oxide thin films with bipolar d.c.-pulsed magnetron sputtering for electrochromic device applications
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Lee, William J.; Fang, Yean-Kuen; Ho, Jyh-Jier; Chen, Chin-Ying; Chen, Shin-Fu; Tsai, Rung-Ywan; Huang, Daoyang; Ho, Fang C. |
國立成功大學 |
2002-11 |
Modeling of abnormal capacitance-voltage characteristics observed in MOS transistor with ultra-thin gate oxide
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Hsu, Yung-Lung; Fang, Yean-Kuen; Tsao, Feng-Cherng; Kuo, Fu-Jung; Ho, Yens |
國立成功大學 |
2002-11 |
Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source
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Hsieh, Wen-Tse; Fang, Yean-Kuen; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Lee, William J.; Wang, H. P. |
國立成功大學 |
2002-10 |
Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition
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Ting, Shyh-Fann; Fang, Yean-Kuen; Hsieh, Wen-Tse; Tsair, Yong-Shiuan; Chang, Chang-Nan; Lin, Chun-Sheng; Hsieh, Ming-Chun; Chiang, Hsin-Che; Ho, Jyh-Jier |
國立成功大學 |
2002-09-26 |
Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with AI(2)O(3) capping layer
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Chien-Hao; Wang, Wen-De; Lin, Tin-Yu; Wang, Ming-Fang; Hou, Tuo-Hung; Cheng, Juing-Yi; Yao, Liang-Gi; Chen, Shyh-Chang; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2002-07 |
Temperature dependence of hot-carrier-induced degradation in 0.1 mu m SOI nMOSFETs with thin oxide
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Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang |
國立成功大學 |
2002-05-01 |
New observations on hot-carrier degradation in 0.1 mu m silicon-on-insulator n-type metal oxide semiconductor field effect transistors
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Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang |
國立成功大學 |
2002-05 |
Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15
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Chung, Ming-Shaw; Wang, Ming-Jun; Lin, Wen-Tai; Chang, Tao-Chih; Fang, Yean-Kuen |
國立成功大學 |
2002-05 |
Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation
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Chen, Chien-Hao; Fang, Yean-Kuen; Ting, Shyh-Fann; Hsieh, Wen-Tse; Yang, Chih-Wei; Hsu, Tzu-Hsuan; Yu, Mo-Chiun; Lee, Tze-Liang; Chen, Shih-Chang; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2002-04 |
Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system
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Lee, William J.; Fang, Yean-Kuen; Ho, Jyh-Jier; Chen, Chin-Ying; Chiou, L. H.; Wang, Shui-Jinn; Dai, F; Hsieh, T; Tsai, Rung-Ywan; Huang, Daoyang; Ho, Fang C. |
國立成功大學 |
2002-04 |
The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 mu m and beyond CMOS technology application
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
國立成功大學 |
2002-04 |
Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Hou, Tuo-Hong; Wang, Ming-Fang; Yu, Mo-Chiun; Lin, Chuing-Liang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
顯示項目 116-140 / 182 (共8頁) << < 1 2 3 4 5 6 7 8 > >> 每頁顯示[10|25|50]項目
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