|
"fang yean kuen"的相關文件
顯示項目 131-155 / 182 (共8頁)
<< < 1 2 3 4 5 6 7 8 > >>
每頁顯示[10|25|50]項目
| 國立成功大學 |
2002-11 |
Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source
|
Hsieh, Wen-Tse; Fang, Yean-Kuen; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Lee, William J.; Wang, H. P. |
| 國立成功大學 |
2002-10 |
Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Hsieh, Wen-Tse; Tsair, Yong-Shiuan; Chang, Chang-Nan; Lin, Chun-Sheng; Hsieh, Ming-Chun; Chiang, Hsin-Che; Ho, Jyh-Jier |
| 國立成功大學 |
2002-09-26 |
Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with AI(2)O(3) capping layer
|
Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Chien-Hao; Wang, Wen-De; Lin, Tin-Yu; Wang, Ming-Fang; Hou, Tuo-Hung; Cheng, Juing-Yi; Yao, Liang-Gi; Chen, Shyh-Chang; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-07 |
Temperature dependence of hot-carrier-induced degradation in 0.1 mu m SOI nMOSFETs with thin oxide
|
Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang |
| 國立成功大學 |
2002-05-01 |
New observations on hot-carrier degradation in 0.1 mu m silicon-on-insulator n-type metal oxide semiconductor field effect transistors
|
Yeh, Wen-Kuan; Wang, Wen-Han; Fang, Yean-Kuen; Yang, Fu-Liang |
| 國立成功大學 |
2002-05 |
Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15
|
Chung, Ming-Shaw; Wang, Ming-Jun; Lin, Wen-Tai; Chang, Tao-Chih; Fang, Yean-Kuen |
| 國立成功大學 |
2002-05 |
Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation
|
Chen, Chien-Hao; Fang, Yean-Kuen; Ting, Shyh-Fann; Hsieh, Wen-Tse; Yang, Chih-Wei; Hsu, Tzu-Hsuan; Yu, Mo-Chiun; Lee, Tze-Liang; Chen, Shih-Chang; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system
|
Lee, William J.; Fang, Yean-Kuen; Ho, Jyh-Jier; Chen, Chin-Ying; Chiou, L. H.; Wang, Shui-Jinn; Dai, F; Hsieh, T; Tsai, Rung-Ywan; Huang, Daoyang; Ho, Fang C. |
| 國立成功大學 |
2002-04 |
The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 mu m and beyond CMOS technology application
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Hou, Tuo-Hong; Wang, Ming-Fang; Yu, Mo-Chiun; Lin, Chuing-Liang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Cu3Ge Schottky contacts on n-GaN
|
Hsin, Hui-Ching; Lin, Wen-Tai; Gong, J. R.; Fang, Yean-Kuen |
| 國立成功大學 |
2002-03 |
A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Hsieh, Wen-Tse; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Lin, Chun-Sheng; Hsieh, Ming-Chun; Chiang, Hsin-Che; Ho, Jyh-Jier |
| 國立成功大學 |
2002-02 |
Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications
|
Lee, William J.; Fang, Yean-Kuen; Ho, Jyh-Jier; Chen, Chin-Ying; Tsai, Rung-Ywan; Huang, Dao-Yang; Ho, Fang C.; Chou, H. W.; Chen, C. C. |
| 國立成功大學 |
2001-12 |
To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment
|
Chen, Chein-Hao; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Hou, Tuo-Hong; Yu, Mo-Chiun; Chen, Shih-Chang; Jang, Syun-Ming; Yu, D. C. H.; Liang, Mong-Song |
| 國立成功大學 |
2001-11 |
A deep submicron CMOS process compatible suspending high-Q inductor
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tang, C. S. |
| 國立成功大學 |
2001-11 |
Nitrogen implanted polysilicon resistor for high-voltage CMOS technology application
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Wang, Ta-Wei; Hsu, Yung-Lung; Hsu, Shun-Liang |
| 國立成功大學 |
2001-11 |
Cubic single-crystalline Si1-x-yCxNy films with mirror face prepared by RTCVD
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Hsieh, Wen-Tse; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Lin, Chun-Sheng; Hsieh, Ming-Chun; Chiang, Hsin-Che; Ho, Jyh-Jier |
| 國立成功大學 |
2001-10-25 |
Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides
|
Chen, Chung-Hui; Fang, Yean-Kuen; Hsieh, Wen-Tse; Ting, Shyh-Fann; Yu, Mo-Chiun; Wang, Ming-Fang; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-08 |
Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Yu, Mo-Chiun; Hou, Tuo-Hung; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-07 |
The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 mu m CMOS technology and beyond
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chung-Hui; Yang, Chih-Wei; Hsieh, Wen-Tse; Ho, Jyh-Jier; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, S; Shih, R |
| 國立成功大學 |
2001-06-07 |
He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications
|
Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chien-Hao; Yang, Chih-Wei; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, Sun-Way; Shih, R. |
| 國立成功大學 |
2001-06 |
High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Lin, Yu-Min; Yu, Mo-Chiun; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-04 |
Using porous silicon as semi-insulating substrate for beta-SiC high temperature optical-sensing devices
|
Hsieh, Wen-Tse; Fang, Yean-Kuen; Wu, Kuen-Hsien; Lee, William J.; Ho, Jyh-Jier; Ho, Chi-Wei |
| 國立成功大學 |
2001-03 |
Effects of post-deposition treatments on ultrathin nitride/oxide gate stack prepared by RTCVD for ULSI devices
|
Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
顯示項目 131-155 / 182 (共8頁)
<< < 1 2 3 4 5 6 7 8 > >>
每頁顯示[10|25|50]項目
|
