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| 國立交通大學 |
2017-04-21T06:55:41Z |
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:14Z |
Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi |
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