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Showing items 31-40 of 50  (5 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T07:28:22Z 4.3 GHz optical bandwidth light emitting transistor Walter, G.;Wu, C.H.;Then, H.W.;Feng, M.;Holonyak, N.; Walter, G.; Wu, C.H.; Then, H.W.; Feng, M.; Holonyak, N.; CHAO-HSIN WU
臺大學術典藏 2018-09-10T07:28:22Z 4-GHz modulation bandwidth of integrated 2 × 2 LED array Wu, C.-H.;Walter, G.;Then, H.W.;Feng, M.;Holonyak Jr.;N.; Wu, C.-H.; Walter, G.; Then, H.W.; Feng, M.; Holonyak Jr.; N.; CHAO-HSIN WU
臺大學術典藏 2018-09-10T07:28:21Z Tunnel junction transistor laser Feng, M.;Holonyak, N.;Then, H.W.;Wu, C.H.;Walter, G.; Feng, M.; Holonyak, N.; Then, H.W.; Wu, C.H.; Walter, G.; CHAO-HSIN WU
臺大學術典藏 2018-09-10T07:28:21Z Scaling of light emitting transistor for multigigahertz optical bandwidth Wu, C.H.;Walter, G.;Then, H.W.;Feng, M.;Holonyak, N.; Wu, C.H.; Walter, G.; Then, H.W.; Feng, M.; Holonyak, N.; CHAO-HSIN WU
臺大學術典藏 2018-09-10T07:28:21Z Electrical-optical signal mixing and multiplication (2→22 GHz) with a tunnel junction transistor laser Then, H.W.;Wu, C.H.;Walter, G.;Feng, M.;Holonyak, N.; Then, H.W.; Wu, C.H.; Walter, G.; Feng, M.; Holonyak, N.; CHAO-HSIN WU
臺大學術典藏 2018-09-10T06:28:13Z Ga2O3/GaAs depletion mode MOSFET Middleton, JR; Hsia, HK; Caruth, D; Moy, AM; Cheng, KY; Feng, M; Hong, M; Mannaerts, JP; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:21:52Z Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors Chu-Kung, B.F.; Wu, C.H.; Walter, G.; Feng, M.; Holonyak Jr.; N.; Chung, T.; Ryou, J.-H.; Dupuis, R.D.; CHAO-HSIN WU
臺大學術典藏 2018-09-10T05:58:10Z A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate Lin, C.-K.; Kuo, H.-C.; Lin, G.-R.; Feng, M.; GONG-RU LIN
臺大學術典藏 2018-09-10T05:58:05Z Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs Liao, Y.-S.; Shi, J.-W.; Wu, Y.-S.; Kuo, H.-C.; Feng, M.; Lin, G.-R.; GONG-RU LIN
臺大學術典藏 2018-09-10T05:58:03Z Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic inxGa 1-xP buffered GaAs substrate Liao, Y.-S.; Lin, G.-R.; Kuo, H.-C.; Feng, M.; GONG-RU LIN

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