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Institution Date Title Author
臺大學術典藏 2018-09-10T05:23:09Z A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate Lin, C.-K.; Kuo, H.-C.; Lin, G.-R.; Feng, M.; GONG-RU LIN
臺大學術典藏 2018-09-10T05:23:05Z Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate GONG-RU LIN; Lin, G.-R.; Kuo, H.-C.; Lin, C.-K.; Feng, M.
國立交通大學 2014-12-08T15:25:14Z 10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023 Liao, YS; Lin, GR; Lin, CK; Chu, YS; Kuo, HC; Feng, M
國立交通大學 2014-12-08T15:18:58Z Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate Lin, GR; Kuo, HC; Lin, CK; Feng, M
國立交通大學 2014-12-08T15:16:24Z Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs Liao, YS; Shi, JW; Wu, YS; Kuo, HC; Feng, M; Lin, GR
臺大學術典藏 2010 Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser Wu, C.H.;Then, H.W.;Feng, M.;Holonyak, N.; Wu, C.H.; Then, H.W.; Feng, M.; Holonyak, N.; CHAO-HSIN WU
臺大學術典藏 2009 Tilted-charge high speed (7 GHz) light emitting diode Walter, G.;Wu, C.H.;Then, H.W.;Feng, M.;Holonyak Jr.;N.; Walter, G.; Wu, C.H.; Then, H.W.; Feng, M.; Holonyak Jr.; N.; CHAO-HSIN WU
國立成功大學 2008-11 Universal quantum computation with quantum-dot cellular automata in decoherence-free subspace Xu, Z. Y.; Feng, M.; Zhang, Wei-Min
國立成功大學 2007-08-15 Generation of entangled photon pairs by semiconductor quantum dots in a structure of quantum cellular automata Feng, M.; An, J. H.; Zhang, Wei-Min
國立臺灣大學 2004 Device technologies for RF front-end circuits in next-generation wireless communications Feng, M.; Shen, Shyh-Chiang; Caruth, D.C.; Huang, J.-J.

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