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"feng m"的相关文件
显示项目 26-50 / 50 (共1页)
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| 臺大學術典藏 |
2018-09-10T08:35:34Z |
Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission
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Tan, F.;Wu, C.H.;Feng, M.;Holonyak Jr.;N.; Tan, F.; Wu, C.H.; Feng, M.; Holonyak Jr.; N.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T08:09:06Z |
The effect of mode spacing on the speed of quantum-well microcavity lasers
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Wu, C.H.;Tan, F.;Feng, M.;Holonyak, N.; Wu, C.H.; Tan, F.; Feng, M.; Holonyak, N.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T08:09:06Z |
Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser
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CHAO-HSIN WU; Walter, G.; Holonyak, N.; Then, H.W.;Wu, C.H.;Feng, M.;Holonyak, N.;Walter, G.; Then, H.W.; Wu, C.H.; Feng, M. |
| 臺大學術典藏 |
2018-09-10T08:09:06Z |
Microwave characterization of Purcell enhancement in a microcavity laser
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Then, H.W.;Wu, C.H.;Feng, M.;Holonyak Jr.;N.; Then, H.W.; Wu, C.H.; Feng, M.; Holonyak Jr.; N.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T08:09:06Z |
Design and layout of multi ghz operation of light emitting diodes
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Wu, C.-H.;Walter, G.;Then, H.W.;Feng, M.; Wu, C.-H.; Walter, G.; Then, H.W.; Feng, M.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T07:28:22Z |
4.3 GHz optical bandwidth light emitting transistor
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Walter, G.;Wu, C.H.;Then, H.W.;Feng, M.;Holonyak, N.; Walter, G.; Wu, C.H.; Then, H.W.; Feng, M.; Holonyak, N.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T07:28:22Z |
4-GHz modulation bandwidth of integrated 2 × 2 LED array
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Wu, C.-H.;Walter, G.;Then, H.W.;Feng, M.;Holonyak Jr.;N.; Wu, C.-H.; Walter, G.; Then, H.W.; Feng, M.; Holonyak Jr.; N.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T07:28:21Z |
Tunnel junction transistor laser
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Feng, M.;Holonyak, N.;Then, H.W.;Wu, C.H.;Walter, G.; Feng, M.; Holonyak, N.; Then, H.W.; Wu, C.H.; Walter, G.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T07:28:21Z |
Scaling of light emitting transistor for multigigahertz optical bandwidth
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Wu, C.H.;Walter, G.;Then, H.W.;Feng, M.;Holonyak, N.; Wu, C.H.; Walter, G.; Then, H.W.; Feng, M.; Holonyak, N.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T07:28:21Z |
Electrical-optical signal mixing and multiplication (2→22 GHz) with a tunnel junction transistor laser
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Then, H.W.;Wu, C.H.;Walter, G.;Feng, M.;Holonyak, N.; Then, H.W.; Wu, C.H.; Walter, G.; Feng, M.; Holonyak, N.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
Ga2O3/GaAs depletion mode MOSFET
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Middleton, JR; Hsia, HK; Caruth, D; Moy, AM; Cheng, KY; Feng, M; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:21:52Z |
Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors
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Chu-Kung, B.F.; Wu, C.H.; Walter, G.; Feng, M.; Holonyak Jr.; N.; Chung, T.; Ryou, J.-H.; Dupuis, R.D.; CHAO-HSIN WU |
| 臺大學術典藏 |
2018-09-10T05:58:10Z |
A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate
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Lin, C.-K.; Kuo, H.-C.; Lin, G.-R.; Feng, M.; GONG-RU LIN |
| 臺大學術典藏 |
2018-09-10T05:58:05Z |
Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
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Liao, Y.-S.; Shi, J.-W.; Wu, Y.-S.; Kuo, H.-C.; Feng, M.; Lin, G.-R.; GONG-RU LIN |
| 臺大學術典藏 |
2018-09-10T05:58:03Z |
Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic inxGa 1-xP buffered GaAs substrate
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Liao, Y.-S.; Lin, G.-R.; Kuo, H.-C.; Feng, M.; GONG-RU LIN |
| 臺大學術典藏 |
2018-09-10T05:23:09Z |
A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate
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Lin, C.-K.; Kuo, H.-C.; Lin, G.-R.; Feng, M.; GONG-RU LIN |
| 臺大學術典藏 |
2018-09-10T05:23:05Z |
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
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GONG-RU LIN; Lin, G.-R.; Kuo, H.-C.; Lin, C.-K.; Feng, M. |
| 國立交通大學 |
2014-12-08T15:25:14Z |
10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023
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Liao, YS; Lin, GR; Lin, CK; Chu, YS; Kuo, HC; Feng, M |
| 國立交通大學 |
2014-12-08T15:18:58Z |
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
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Lin, GR; Kuo, HC; Lin, CK; Feng, M |
| 國立交通大學 |
2014-12-08T15:16:24Z |
Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
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Liao, YS; Shi, JW; Wu, YS; Kuo, HC; Feng, M; Lin, GR |
| 臺大學術典藏 |
2010 |
Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser
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Wu, C.H.;Then, H.W.;Feng, M.;Holonyak, N.; Wu, C.H.; Then, H.W.; Feng, M.; Holonyak, N.; CHAO-HSIN WU |
| 臺大學術典藏 |
2009 |
Tilted-charge high speed (7 GHz) light emitting diode
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Walter, G.;Wu, C.H.;Then, H.W.;Feng, M.;Holonyak Jr.;N.; Walter, G.; Wu, C.H.; Then, H.W.; Feng, M.; Holonyak Jr.; N.; CHAO-HSIN WU |
| 國立成功大學 |
2008-11 |
Universal quantum computation with quantum-dot cellular automata in decoherence-free subspace
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Xu, Z. Y.; Feng, M.; Zhang, Wei-Min |
| 國立成功大學 |
2007-08-15 |
Generation of entangled photon pairs by semiconductor quantum dots in a structure of quantum cellular automata
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Feng, M.; An, J. H.; Zhang, Wei-Min |
| 國立臺灣大學 |
2004 |
Device technologies for RF front-end circuits in next-generation wireless communications
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Feng, M.; Shen, Shyh-Chiang; Caruth, D.C.; Huang, J.-J. |
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